Allicdata Part #: | IRLR3715-ND |
Manufacturer Part#: |
IRLR3715 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A DPAK |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Surface... |
DataSheet: | IRLR3715 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRLR3715 is a high voltage and high performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Its superior performance in terms of low on-state resistance (Rdson) and gate charge (Qg) make it suitable for a variety of applications.
IRLR3715 is built on the TrenchFET™ process technology which helps deliver high levels of performance, ruggedness and reliability. This cutting-edge process technology is suitable for devices that are used in power supply design, DC-DC conversion and other applications where reliability is critical.
Due to its low Rdson and high input impedance, the IRLR3715 is ideal for use in high voltage switching applications such as power factor correction systems, AC/DC converters, power supplies, motor control, and other power management applications. The device also offers fast switching and low THD (total harmonic distortion), making it suitable for audio or video switching applications.
The IRLR3715 features an integrated oxide-nitride-oxide (ONO) charge pump that allows higher voltage and faster Gate capacitance (Qgs) charging. This results in improved dynamic response. The ONO charge pump is integrated to reduce external components and improve power efficiency, while also ensuring reliable and robust performance.
The IRLR3715 has a maximum drain-source withstand voltage of 600V and a maximum junction temperature of 150°C. The device is also protected against ESD (Electro-Static Discharge) and latch-up effects. The device also has a low on resistance (Rdson) of just 45mΩ at 10V gate drive and excellent gate charge (Qg) of just 22nC. This combination makes the IRLR3715 one of the best MOSFETs for high-powered switching applications.
In terms of its working principle, the IRLR3715 is a voltage-controlled device with a gate terminal that is connected to an external voltage source. When the external voltage source is applied, a current flows into the gate terminal, and this causes a change in the threshold voltage of the device, thus turning it ON and OFF. The device can be used as an electronic switch, for controlling the flow of electrical current in various applications.
The IRLR3715, as a single MOSFET, can be used in simple systems as a single switch. It can also be used in more complicated systems, such as motor control systems, DC-DC converters, and power modules. In such applications, the IRLR3715 can be used to provide isolation and control the current between two or more terminals.
Overall, the IRLR3715 is an excellent choice for applications that require both high voltage and low on-resistance. Its low Rdson and fast switching operations make it a suitable choice for switching applications in audio and video, power management, and other high-powered applications.
The specific data is subject to PDF, and the above content is for reference
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