IRLZ24LPBF

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The IRLZ24LPBF is a high performance Power MOSFET from Infineon Technologies AG. It\'s a single-N-channel MOSFET which has a breakdown voltage (VDSS) of 30V, and a continuous current drain (ID) of 24A. The physical size of the device is slightly larger than a conventional Power MOSFET, measuring about 9mm x 5mm x 3mm, making it ideal for applications requiring a more compact design.

The IRLZ24LPBF is suitable for switching and linear applications, primarily in industrial and consumer electronics.Some common applications include high power voltage conversion, power distribution and switching, DC-DC and AC-DC power supplies, and motor control.

The working principle of the IRLZ24LPBF is based on the electric field created by the N-Channel (or MOS) gap. This field affects the flow of electrons, and can be manipulated to either divert or restrict the current passing through the component.

When there is no external control, the current flow is unimpeded and remains in the ‘ON’ state. When a voltage is applied to the Gate terminal, the electric field around the channel is altered, and this restricts the current flow.

At low Gate voltages, the resistance of the channel is reduced (‘um’) so the current flow is unrestricted, whereas when the voltage is increased, the resistance of the channel increases and the current flow is restricted and eventually brought to a stop (‘OFF’ state).

Aside from controlling the current, the Gate voltage can also be used to modulate the voltage across the channel (‘Vds’), and this is an important factor in many switching and linear applications.

The IRLZ24LPBF also has a number of built-in protection features such as overload protection and short-circuit protection, making it suitable for use in safety-critical applications.

In conclusion, the Infineon IRLZ24LPBF is an ideal choice for any application requiring control of high power current in an electrical circuit. It is a reliable, robust and high performance power MOSFET with a wide range of uses and applications.

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