IRLZ34NSPBF Allicdata Electronics
Allicdata Part #:

IRLZ34NSPBF-ND

Manufacturer Part#:

IRLZ34NSPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 30A D2PAK
More Detail: N-Channel 55V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface...
DataSheet: IRLZ34NSPBF datasheetIRLZ34NSPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRLZ34NSPBF is a type of enhancement-mode Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) widely used in power switching circuits, motor control systems, switching regulators, converters, and various electronic circuits. It is a three-terminal device featuring integrated protection features such as over current protection and thermal shutdown. The IRLZ34NSPBF has a source-drain breakdown voltage of 55V, a nominal drain current of 19A and incredibly fast switching speeds making it an ideal device for high-power applications such as motor driver circuits.

The IRLZ34NSPBF is a part of the Z34N series of MOSFETs, which feature high-voltage, fast switching, low gate-charge and advanced protection features. The IRLZ34NSPBF has an on-resistance of 0.206 ohms, an input capacitance of 347pF, an output capacitance of 66pF, and a switching time of 11 ns. It is available in a TO-220 type package making it well suited for automotive, industrial and consumer applications.

The working principle of a MOSFET is similar to that of a BJT: an electric field created at the gate to control current flowing between the source and drain regions. However, instead of relying on the motion of electrons to produce the electric field, the MOSFET utilizes the amount of charge accumulated at the gate capacitor. The IRLZ34NSPBF is an enhancement-mode MOSFET, meaning that no voltage is applied to the gate to create the electric field and that it is “on” when the gate voltage is less than the source voltage.

With its high power ratings and fast switching speeds, the IRLZ34NSPBF is well suited for use in motor control circuits and power converters. It is also particularly useful in high-power DC-to-DC converter applications, due to its low on-resistance and low gate charge. Additionally, its integrated protection features ensure reliable operation in applications where the device is subject to over temperature or over current conditions.

In conclusion, the IRLZ34NSPBF is a high-power MOSFET that offers excellent thermal and electrical performance as well as integrated protection features. It is ideal for use in power switching circuits, motor control systems, switching regulators, and DC-to-DC converters, making it an excellent choice for applications where reliability and power efficiency are key considerations.

The specific data is subject to PDF, and the above content is for reference

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