Allicdata Part #: | IRLZ44STRL-ND |
Manufacturer Part#: |
IRLZ44STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 50A D2PAK |
More Detail: | N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surfac... |
DataSheet: | IRLZ44STRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 31A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRLZ44STR is a specific type of a MOSFET, a type of Field-Effect Transistor (FET). It is a depletion-mode transistor made using silicon on insulator (SOI) technology. It is a single N-type transistor which has a high-breakdown voltage of 90 V and is capable of both unipolar and bipolar switching.
The IRLZ44STR is mainly used as a driver for power circuits, as a switch in many power supply designs, and as a pre-driver to standard output MOSFETs. It is a highly reliable N-channel transistor due to the SOI technology used in the design, making it an ideal choice when long-term reliability is a concern.
In terms of applications, the IRLZ44STR has been used in a number of different circuits and devices. These include motor drivers for robots, gate drivers for solar inverters, low-side switching for automotive applications, and variable frequency drives (VFDs). It is also used in power supplies, as well as PWM controllers for DC/DC converters and in current sensing applications.
The basic working principle of an IRLZ44STR is fairly straightforward. A potential difference is applied to the gate terminal, which creates an electric field across the channel of the transistor. This electric field attracts electrons, which enables the current to flow between the drain and the source. By adjusting the voltage applied to the gate terminal, the current flowing through the transistor can be controlled. In addition, since the IRLZ44STR is a depletion-mode transistor, a negative potential applied to the gate will reduce the current flowing through the transistor.
Due to its high breakdown voltage and SOI technology, the IRLZ44STR is an ideal choice for various switching applications. It is highly reliable and provides excellent heat dissipation, making it suitable for high-powered applications. It is also available in a variety of package sizes, which makes it easy to use in a variety of devices and circuits.
In conclusion, the IRLZ44STR is a powerful and reliable MOSFET perfect for high-power switching applications. It utilizes SOI technology for improved reliability and can handle very high voltages. It is mainly used as a driver for power circuits, as a switch in many power supply designs, and as a pre-driver to standard output MOSFETs. It is available in a variety of package sizes to meet the needs of any application.
The specific data is subject to PDF, and the above content is for reference
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IRLZ34S | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 30A D2PAK... |
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IRLZ44STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 50A D2PAK... |
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