IRLZ24NL

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IRLZ24NL is a type of insulated-gate field-effect transistor (IGFET), also known as a metal–oxide–semiconductor field-effect transistor (MOSFET). It belongs to the single category among the field-effect transistors (FETs). It features a high-side output, which allows it to operate from very low input voltages up to 20V. It is available in both IGSky and IGPat models, where IGSky is the surface-mount version and IGPat is the through-hole version.

The IRLZ24NL has an on-state resistance (RDSON) of just 15 ohms, and a current-handling capability of up to 150A. It also has a maximum drain-source breakdown voltage of up to 200V, making it ideal for high-voltage applications. The IRLZ24NL also has a low turn-on and turn-off times, and easy gate (G) control.

The IRLZ24NL\'s primary application field is in power management and motor-drive applications. It is suitable for automotive and industrial applications, including direct battery connection, electric power steering, and motor drives. Additionally, it is also used in DC-DC converters and solar inverters. The low on-state resistance of the IRLZ24NL reduces the power loss, allowing for higher efficiency and reliability.

The IRLZ24NL uses a process called “self-aligned quad-gate architecture” for superior switching performance. This technology improves the RDSON and Qg (gate charge) performance, as well as reduces both the gate-source voltage (VGS) and the on-state losses. This makes the IRLZ24NL ideal for motor drive applications where high-current gate drive is required.

The working principle of the IRLZ24NL is similar to that of other IGFETs. When the gate (G) is held at a negative voltage with respect to the source (S), electrons are attracted to and form an electric field across the gate oxide. This electric field affects the amount of current flowing between the source and drain (D) terminals, thus controlling the resistance between them. Thus, the gate voltage can be used to control the current between the source and drain. When the gate voltage is increased, the resistance between the source and drain decreases and vice versa.

In conclusion, the IRLZ24NL is a single-channel insulated-gate field-effect transistor (IGFET). It has an on-state resistance (RDSON) of just 15 ohms, and a current-handling capability of up to 150A. It is suitable for automotive and industrial applications, including direct battery connection, electric power steering, and motor drives. The IRLZ24NL uses a process called “self-aligned quad-gate architecture” for superior switching performance. The working principle of the IRLZ24NL is similar to that of other IGFETs, where a negative gate voltage is used to control the current between the source and drain. It is an ideal choice for high-voltage, high-current applications.

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