IRLZ44NSTRRPBF Allicdata Electronics
Allicdata Part #:

IRLZ44NSTRRPBF-ND

Manufacturer Part#:

IRLZ44NSTRRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 47A D2PAK
More Detail: N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Surfac...
DataSheet: IRLZ44NSTRRPBF datasheetIRLZ44NSTRRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRLZ44NSTRRPBF is a high-performance transistor device designed to perform a wide variety of tasks in the modern world. It is a single-transistor technology, combining the power of N-channel and P-channel MOSFETs into a single transistor to achieve unmatched performance. Furthermore, its performance is optimized for switching applications, power management, and RF applications. The device is used in a wide range of products, including computers, consumer electronics, industrial machinery, and medical devices.The IRLZ44NSTRRPBF features relatively low on-resistance and fast switching times due to its optimized layout. This allows for efficient power conversion, minimal power consumption, and reliable operations in extreme temperatures. Furthermore, the device\'s low thermal resistance is ideal for operations in high-powered and high-temperature applications. Additionally, the device features a low gate-source capacitance, allowing for the use of high-frequency signals and increased signal fidelity.The IRLZ44NSTRRPBF is a boosted product of the IRLRZ family. P-channel and N-channel MOSFETs are placed on the same chip to allow an optimized layout, which increases signal efficiency and performance. The device is designed to be compatible with existing power systems, so installation and integration with existing systems is an easy process. Furthermore, the device can be installed and used in a variety of applications, such as low power, high voltage, or high frequency applications.The device operates in accordance with the following principle: when an external voltage is applied to the gate terminal of the IRLZ44NSTRRPBF, a channel is formed between the source and the drain by inducing a current through the channel. This allows current to flow through the device and act as a switch, regulating the amount of current flowing from the source to the drain. Because of its optimized layout, the IRLZ44NSTRRPBF is able to provide faster switching times and higher switching capacity than regular MOSFETs.The IRLZ44NSTRRPBF device is an excellent choice for a wide range of applications. Its enhanced design for fast switching means improved power conversion and reliable operation in high-temperature conditions. Furthermore, its compatibility with existing power systems allows for easy installation and integration. The device is an ideal choice for low power, high voltage, and high-frequency applications as well as signal fidelity and reliability.

The specific data is subject to PDF, and the above content is for reference

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