IXFA130N10T

Vgs(th) (Max) @ Id:	4.5V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (IXFA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	360W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5080pF @ 25V
Vgs (Max):	--
Gate Charge (Qg) (Max) @ Vgs:	104nC @ 10V
Series:	TrenchMV™
Rds On (Max) @ Id, Vgs:	9.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	130A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction
The IXFA130N10T is a high density process N-Channel MOSFET. This type of MOSFET can operate at high speeds, low operating current, low gate charge and low temperature rise. This type of MOSFET is ideal for high power application from several Watts up to hundreds of Watts and is ideal for systems where size and weight are important.Application Field
The IXFA130N10T is a high power MOSFET and is suitable for a wide range of applications. These include switching power supplies, power amplifiers, switched-mode and resonant circuit driven applications, motor controllers, high voltage Pulse Width Modulation (PWM) circuits, high side switching, and high current level shifting. It is suitable for DC/DC converters, audio and radio frequency power amplifiers, and battery chargers, among other applications.Working Principle
The IXFA130N10T is an enhancement-type N-channel MOSFET with a gate-source voltage, typically VGS = -10V. This type of MOSFET utilizes a voltage applied to the gate terminal to control the current flow between the source and drain terminals. Typically, the device can operate from -10V to +10V at the gate terminal. When a negative voltage is applied to the gate terminal, the current between the source and drain terminals is reduced, as the gate voltage becomes more negative. This device features low on-resistance and fast switching performance.Features
The IXFA130N10T offers excellent performance in terms of low gate charge, low RDS(ON) and the ability to operate up to 10V VGS. It has an efficient drive capability and can have a high dv/dt capability, while also providing ESD protection to ensure reliability. It also offers low drain-source leakage, as well as good current/voltage ratio and temperature rise stability.Conclusion
The IXFA130N10T is a high density process N-Channel MOSFET that is suitable for a range of high power applications. This type of MOSFET offers excellent switching performance, low RDS(ON) and fast switching speeds. Its low drain-source leakage, good current/voltage ratio and temperature rise stability make it an ideal MOSFET for many applications.

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