Allicdata Part #: | IXFA56N30X3-ND |
Manufacturer Part#: |
IXFA56N30X3 |
Price: | $ 5.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 300V/56A ULTRA JUNCTION X3-CLASS |
More Detail: | N-Channel 300V 56A (Tc) 320W (Tc) Surface Mount TO... |
DataSheet: | IXFA56N30X3 Datasheet/PDF |
Quantity: | 140 |
1 +: | $ 4.82580 |
50 +: | $ 3.87967 |
100 +: | $ 3.53487 |
500 +: | $ 2.86236 |
1000 +: | $ 2.41403 |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3.75nF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4.5V @ 1.5mA |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXFA56N30X3 is a type of Field Effect Transistor (FET) which is typically used for power switching applications. This type of FET is characterized by a metal-oxide semiconductor field-effect structure (MOSFET). As a result, it is typically used for power switching applications as it offers higher breakdown voltages and lower threshold voltages than most other types of transistors and FETs.
The basic structure of a MOSFET consists of three distinct terminals: the source (S), the drain (D) and the gate (G). This type of FET is capable of creating an electric field which allows the transistor to operate as a switching device. In order for the MOSFET to function, the gate must be provided with an input voltage. When the gate voltage is made higher than the source voltage, the FET will be "on" and will allow current to flow. Conversely, when the gate voltage is made lower than the source voltage, the FET will be "off" and will block the flow of current.
The IXFA56N30X3 features a design which is very tolerant to latch-up and free-wheeling. This FET also does not require any additional gate drivers for normal operation. As a result, the IXFA56N30X3 can be used in applications that require switching at frequencies up to 250 kHz.
The IXFA56N30X3 is, in basic terms, a saturated device and operates in a fully conducting state. This FET has a maximum current rating of 56 amps and a total on-state resistance of only 0.0030 ohms. Additionally, the IXFA56N30X3 has a low gate threshold voltage of 4 volts, which allows for easy switching operation. The IXFA56N30X3 also has a very low capacitance level of only 3 pf, which provides excellent switching speed.
The IXFA56N30X3 is well-suited for use in a wide range of DC and AC switching and power-supply applications, including motor control, switching power supplies, UPS systems, and power inverters. This FET can also be used in circuits that require spread-spectrum technology to reduce EMI interference.
In summary, the IXFA56N30X3 is a type of Field Effect Transistor (FET) which is typically used for power switching applications. It offers higher breakdown voltages and lower threshold voltages than most other types of transistors and FETs. The IXFA56N30X3 is well-suited for use in a wide range of DC and AC switching and power-supply applications and can provide excellent switching speed and reduced EMI interference.
The specific data is subject to PDF, and the above content is for reference
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