IXFA130N15X3 Allicdata Electronics
Allicdata Part #:

IXFA130N15X3-ND

Manufacturer Part#:

IXFA130N15X3

Price: $ 4.38
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH
More Detail: N-Channel 150V 130A (Tc) 390W (Tc) Surface Mount T...
DataSheet: IXFA130N15X3 datasheetIXFA130N15X3 Datasheet/PDF
Quantity: 1000
50 +: $ 3.93586
Stock 1000Can Ship Immediately
$ 4.38
Specifications
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
Vgs (Max): ±20V
Series: HiPerFET™
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Rds On (Max) @ Id, Vgs: 9 mOhm @ 65A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The IXFA130N15X3 is a vertical double diffused MOSFET (VDMOS) transistor, which is part of IXYS’s high power silicon carbide range. It is specifically designed for use in high voltage applications such as DC-DC converters, motor control and power management applications.

The IXFA130N15X3 has a wide operating range of up to +/−1700V with a maximum drain current of 130A. Its superior performance and low resistance also makes it suitable for applications where high current and low switching losses are important, such as switch mode power supplies and motor control equipment. Additionally, the IXFA130N15X3 is capable of handling very high voltages with a peak voltage of +/−1750V.

The IXFA130N15X3 is a vertical double diffused MOSFET, meaning that it contains two separate groups of source regions that are separated by two gates. This allows for much higher switching speeds than those of conventional single-gate MOSFETs, making the IXFA130N15X3 ideal for high-frequency switching applications. It also allows it to operate at much higher voltages, up to +/−1700V.

The IXFA130N15X3 also has a very low ON resistance of just 0.1ish, making it much more efficient than other similar MOSFETs. This makes the IXFA130N15X3 an ideal choice for applications where efficiency is important. Additionally, the device features an integrated ESD protection circuit, which helps protect it against damage due to electrostatic discharge.

The IXFA130N15X3 can be used in a wide range of applications. It is particularly well-suited for power management applications such as switch mode power supplies and motor control equipment, where high current and low switching losses are essential. It is also used in DC-DC converters, for providing high-voltage DC output. Additionally, the IXFA130N15X3 is suitable for use in high-voltage, high-frequency circuits, such as those used in RF applications.

The IXFA130N15X3 is an example of the technological advances that have been made in semiconductor technology over the last decade. It provides high performance, high reliability and high efficiency, making it an ideal choice for a wide range of applications. From motor control to power management, the IXFA130N15X3 is an excellent choice for high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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