IXFA38N30X3

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The IXFA38N30X3, a 30V Single N-channel enhancement-mode MOSFET from Nexperia, is used in a variety of applications, including power management applications and other high efficiency applications. It has an ultimate drain current of 61A, a drain-source breakdown voltage of 30V, and a RDS(on) of 38mΩ (at VGS=10V).

The IXFA38N30X3 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is a field-effect transistor that uses both a gate terminal and an electric field to control the current flow through the device. The gate is a conducting channel of electrons that is between the two other terminals on the device, the source and the drain. The gate is insulated from the drain and source with an insulating layer, which is known as the gate oxide. Typically, the insulator used for these types of devices is silicon dioxide.

When the gate of the IXFA38N30X3 is held at zero voltage, the transistor remains in “off” state, meaning that no current is flowing from the drain to the source. When a positive or negative voltage is applied to the gate, the electric field generated between the gate and the channel modulates the current flow, thus allowing current to flow. This is referred to as an “enhancement-mode” MOSFET.

The IXFA38N30X3 is a high efficiency device mainly used in power management applications in automotive and industrial environments. Its ultimate drain current of 61A and low RDS(on) of 38mΩ (at VGS=10V) make it well-suited for high power applications. It can also be used in voltage conversion circuits and load switch applications.

The IXFA38N30X3 is a single-channel device and is not suitable for use in applications that require multiple-channel operation. It is also not suitable for applications where low Off-state leakage current is important, as it has a relatively high leakage current of 30 μA at 25°C.

In summary, the IXFA38N30X3 is a 30V Single N-channel enhancement-mode MOSFET from Nexperia that is used in a variety of power management applications and other high efficiency applications. Its ultimate drain current of 61A and low RDS(on) make it well-suited for high power applications. Its single-channel design and relatively high leakage current limit its use in certain applications.

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