Allicdata Part #: | IXFA36N30P3-ND |
Manufacturer Part#: |
IXFA36N30P3 |
Price: | $ 2.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 36A TO-263AA |
More Detail: | N-Channel 300V 36A (Tc) 347W (Tc) Surface Mount TO... |
DataSheet: | IXFA36N30P3 Datasheet/PDF |
Quantity: | 50 |
1 +: | $ 2.63970 |
50 +: | $ 2.11919 |
100 +: | $ 1.93082 |
500 +: | $ 1.56347 |
1000 +: | $ 1.31859 |
Specifications
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 347W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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IXFA36N30P3 Application Field and Working Principle
The IXFA36N30P3 is a high-voltage (500 V) field-effect transistor (FET) optimum for use in applications such as switch mode power supplies, uninterruptible power supplies, and motor drives. This type of FET has the capability to provide extremely fast switching speed with low on-state resistance (Ron), which are very beneficial in applications that require high speed and high efficiency. It is well suited for use as in high-side switching circuits and for low-side switching circuits when protected by avalanche-rated devices.FET Technology
A field effect transistor (FET) is a type of transistor that is designed to act as a switch. It consists of a source (S), gate (G), drain (D) terminals, and a substrate (B). It works by applying a voltage to the gate terminal, which creates an electric field that extends from the gate to the drain and reduces current flow between the source and drain. This makes it possible to control the flow of current in a circuit, allowing it to be used as an amplifier or as a switch.FETs are divided into two main types: junction field effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs). The IXFA36N30P3 is a type of MOSFET, which are more common than JFETs, and are favored for high-performance and high-speed applications.IXFA36N30P3 Features and Specifications
The IXFA36N30P3 is a single-mode MOSFET designed to provide excellent switching performance, low on-state resistance, and low gate charge. It has a drain-source breakdown voltage of 500 V, a maximum drain current of 36 A, and a maximum drain-source on-state resistance of 6.4 mΩ. It also has a very high switching speed, with a total gate charge (Qg) of only 17 nC and a rise time (tr) of only 25ns. This makes it ideal for use in high-speed and high-efficiency applications, such as switch mode power supplies and motor drives.Working Principle of the IXFA36N30P3
The working principle of the IXFA36N30P3 is relatively simple. When a voltage is applied to the gate terminal, it generates an electric field that extends from the gate to the drain, restricting the current flow between the source and the drain. By controlling the voltage applied to the gate, it is possible to control the current flow, turning the IXFA36N30P3 into either an on or off state.When the IXFA36N30P3 is in an on state, the resistance between the source and drain is low, allowing current to flow through the FET with minimal restriction. When the IXFA36N30P3 is in an off state, the resistance between the source and drain is high, and almost no current will flow. This makes the IXFA36N30P3 an ideal choice for high-performance, high-speed applications, as it can switch rapidly between states with minimal losses.Conclusion
The IXFA36N30P3 is a high-voltage and high-performance single-mode MOSFET that is ideal for use in switch mode power supplies, uninterruptible power supplies, and motor drives. It is capable of very fast switching speed, with a maximum drain current of 36A, a maximum drain-source on-state resistance of 6.4mΩ, and a rise time of only 25ns. Its simple working principle, combined with its excellent performance, make it an ideal choice for many high-performance applications.The specific data is subject to PDF, and the above content is for reference
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