Allicdata Part #: | IXFA10N60P-ND |
Manufacturer Part#: |
IXFA10N60P |
Price: | $ 2.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 10A D2-PAK |
More Detail: | N-Channel 600V 10A (Tc) 200W (Tc) Surface Mount TO... |
DataSheet: | IXFA10N60P Datasheet/PDF |
Quantity: | 101 |
1 +: | $ 2.11050 |
50 +: | $ 1.69533 |
100 +: | $ 1.54463 |
500 +: | $ 1.25077 |
1000 +: | $ 1.05487 |
Vgs(th) (Max) @ Id: | 5.5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1610pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 740 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA10N60P is a popular MOSFET transistor with a wide range of applications. Essentially, it is a type of power semiconductor which is used in many microelectronic products, including audio amplifiers, radio transmitters, power supplies and voltage converters. This device is especially popular due to its low on-state resistance, high current (up to 10A) and high breakdown voltage (600 V). The IXFA10N60P has a number of important characteristics, such as the density of its charge carriers, its channel length modulation, and its gate width.
The IXFA10N60P is a N-channel MOSFET transistor, which means it is capable of conducting electric current between the drain and source, while the gate voltage is used to control the current through the device. The decisive parameter here is the gate-to-source voltage (VGS), which is used to determine the amount of current the device can allow or block. When the voltage is below the threshold voltage (VTH), the current is blocked, and when the voltage is above the threshold voltage, the current is allowed. So, by controlling the gate voltage, the amount of current that passes through the device can be adjusted as desired.
The IXFA10N60P also has a high voltage rating, which is important for devices that need to handle high currents and/or high voltages. By utilizing the extensive coverage provided by the IXFA10N60P, equipment designers have been able to increase the power rating of their products and reduce the overall size of power stages.
The max current (drain current) of the transistor is determined by the junction temperature and the drain voltage. As the temperature increases, the initial current will be reduced as a result of the transistor channel narrowing. This is why the IXFA10N60P is often used in power supplies, where the temperature and drain voltage can be monitored and adjusted to ensure the safe operation of the device. The breakdown voltage rating of the IXFA10N60P (600 V) ensures that the device can handle currents of up to 10 A.
The IXFA10N60P also features a high input capacitance, which is the measurement of how much charge is stored within the gate-drain area of the transistor. This capacitance is particularly important for applications that need to work with audio or video signals, as the input capacitance of the device will determine how much of the signal is lost as it passes through the device. The IXFA10N60P features a high input capacitance which, combined with its low on-state resistance and high current handling ability, makes it an ideal choice for audio and video applications.
In summary, the IXFA10N60P is a popular MOSFET transistor with a wide range of applications. Its low threshold voltage and high current handling ability make it suitable for both analog and digital circuits. The device has a high input capacitance, which makes it ideal for audio and video applications and its breakdown voltage rating ensures that it can handle currents up to 10A. This makes the IXFA10N60P a highly versatile transistor which can be used in a wide range of contexts.
The specific data is subject to PDF, and the above content is for reference
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