IXFA4N100P

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The IXFA4N100P is an N-channel enhancement mode MOSFET specifically designed for high current switching applications. It is a versatile product from IXYS that you can use in many different applications, from low and high side switching to motor control and inverter circuits. With its low parasitic capacitance and low gate charge, it is ideal for high-frequency switching applications. In this article, we take a look at the IXFA4N100P\'s application field and working principle.

IXFA4N100P Application Field

The IXFA4N100P is a high current, low-frequency MOSFET that offers a variety of possible applications. It can be used in low and high side switching, motor control and inverter circuits. This MOSFET has an RDSon of up to 4.5 Ohms, making it suitable for high power applications including lighting, motor control, and gate driver circuits. It also has a low gate charge of only 27.7nC and a low input capacitance of only 1.2nF, making it ideal for high frequency switching applications.

The IXFA4N100P can also be used in low side switching applications, such as switching LEDs and motor control circuits. It has a low input capacitance of only 1.2nF, making it suitable for high switching frequency applications. The MOSFET also has low transition times, making it ideal for high frequency switching applications. In addition, it has a low gate charge of only 27.7nC, making it suitable for robust high frequency switching.

In addition, this MOSFET can be used in high current applications, such as power supplies and converters. It has a high RDSon of up to 4.5 Ohms, making it suitable for these high current applications. It also has a low gate charge of only 27.7nC and a low input capacitance of only 1.2nF, making it ideal for high frequency switching applications.

IXFA4N100P Working Principle

The IXFA4N100P is an N-channel enhancement mode MOSFET. This type of MOSFET has three terminals - the gate, source, and drain - which are connected to a single semiconductor layer. The gate terminal is used to control the flow of current between the source and drain terminals. In an N-channel MOSFET, when the gate voltage is made positive, it attracts electrons from the semiconductor layer, thus creating a channel between the source and drain terminals. This allows the current to flow through the channel. When the gate voltage is made negative, the channel is blocked and the current cannot flow through it.

The IXFA4N100P has a low gate threshold voltage of -2.5V, allowing it to be easily triggered by low voltages. This makes it suitable for a variety of applications, such as motor control and inverter circuits. The MOSFET also has a high RDSon and low gate charge, making it ideal for high current and high frequency switching applications.

The IXFA4N100P is a versatile product from IXYS and can be used in many different applications, from low and high side switching to motor control and inverter circuits. It has a low gate charge and a low input capacitance, which makes it ideal for high frequency switching applications. In addition, its high RDSon makes it suitable for high current applications such as power supplies and converters. With its versatile applications and excellent performance, the IXFA4N100P is an ideal choice for many different projects.

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