| Allicdata Part #: | IXFA12N65X2-ND |
| Manufacturer Part#: |
IXFA12N65X2 |
| Price: | $ 1.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CHN-Channel 650V 12A (Tc) 180W (Tc) Surfa... |
| More Detail: | N/A |
| DataSheet: |  IXFA12N65X2 Datasheet/PDF |
| Quantity: | 987 |
| 1 +: | $ 1.92000 |
| 10 +: | $ 1.86240 |
| 100 +: | $ 1.82400 |
| 1000 +: | $ 1.78560 |
| 10000 +: | $ 1.72800 |
| Series: | HiPerFET™ |
| Packaging: | -- |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 310 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1134pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 180W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-263AA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Base Part Number: | -- |
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The IXFA12N65X2 is a type of field effect transistor (FET), specifically a metal–oxide–semiconductor field-effect transistor (MOSFET). Field effect transistors are commonly used in a wide range of applications, such as for amplifying signals, controlling current and voltage, switching, and providing power in digital circuits. FETs have several advantages over other types of transistors, including low on-state resistance and higher input impedance. The IXFA12N65X2 is a single FET, meaning that it has one gate, one source, and one drain. The IXFA12N65X2 is designed for applications such as audio amplifier circuits and power management.
The working principle of the IXFA12N65X2 is quite simple. When a voltage is applied to the gate of the FET, the charge carriers within the transistor are electrically polarized, allowing current to flow from the gate to the source. This process creates a “channel” through which current flows from the source to the drain. The size and shape of the channel can be varied by changing the amount of voltage applied to the gate. This allows the IXFA12N65X2 to be used to control the current flow in a circuit.
The IXFA12N65X2 is an ideal choice for audio amplifier circuits, due to its high input impedances and low switching noise. Additionally, its high breakdown voltage makes it suitable for use in high voltage applications such as solar panel power supplies. This FET can also be used for power management purposes, where it can be used to regulate the current flow in a circuit and provide voltage control.
The IXFA12N65X2 is a versatile FET that can be used for a variety of different applications. Its high input impedance and low switching noise make it an ideal choice for audio amplifier circuits, while its high breakdown voltage makes it suitable for use in high voltage applications. Furthermore, it can be used for power management applications, where it can be used to regulate the current flow in a circuit and provide voltage control.
The specific data is subject to PDF, and the above content is for reference
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