IXFA3N120TRL Allicdata Electronics
Allicdata Part #:

IXFA3N120TRLTR-ND

Manufacturer Part#:

IXFA3N120TRL

Price: $ 3.05
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1200V 3A TO-263
More Detail: N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO...
DataSheet: IXFA3N120TRL datasheetIXFA3N120TRL Datasheet/PDF
Quantity: 1000
800 +: $ 2.76621
Stock 1000Can Ship Immediately
$ 3.05
Specifications
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IXFA3N120TRL Application Field and Working Principle

IXFA3N120TRL is a type of unipolar field-effect transistors (FETs), which is also commonly referred to as metal-oxide-semiconductor field-effect transistors (MOSFETs). This type of FETs are widely used in electronics today. They are used to control the current and voltage flow in circuits, and are particularly useful due to their high switching speed, high input and output impedances, and small size. In this article, we will discuss the application field and working principle of IXFA3N120TRL.

Application Field

IXFA3N120TRL has a number of applications. It can be used in power amplifiers, driver stages for motors, and for voltage regulation. It is also used in RF and microwave applications, such as switches and mixers, due to its high frequency performance. It can also be used for high-speed digital logic circuits, as it has the capability of performing very fast switching times.

Working Principle

The way IXFA3N120TRL works is through the use of a gate voltage. This gate voltage determines the current that is allowed to flow through the FET. When a positive voltage (VGS) is applied to the gate, current is allowed to flow through the FET and when no voltage is applied, no current flows. The direction of the flow is determined by the polarity of the voltage at the gate. When negative voltage (VGS) is applied to the gate, it acts as an open switch, and current is not allowed to flow. This type of operation is referred to as a depletion mode operation.

Apart from controlling current flow, the IXFA3N120TRL can also be used to control the voltage across a device. This method is known as voltage-level shifting. When a source voltage is applied to the source terminal and a gate voltage is applied to the gate terminal, the voltage at the drain terminal will be determined by the difference in the two voltages. This technique can be used to increase the voltage at the drain or decrease the voltage at the drain.

The IXFA3N120TRL is also capable of high-speed switching. In this technique, a voltage is applied to the gate and the current flow is quickly shifted between the source and the drain. This makes the IXFA3N120TRL useful in digital logic applications. The benefit of using high-speed FETs is that they are capable of performing faster switching operations than traditional switches.

In summary, IXFA3N120TRL is a type of unipolar field-effect transistors (FETs) that can be used in power amplifiers, driver stages for motors, RF and microwave applications, such as switches and mixers, as well as high-speed digital logic circuits. It works by varying the gate voltage, which in turn controls the current flow through the device. It can also be used for voltage-level shifting and for high-speed switching operations.

The specific data is subject to PDF, and the above content is for reference

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