Allicdata Part #: | IXFA14N60P-ND |
Manufacturer Part#: |
IXFA14N60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 14A D2-PAK |
More Detail: | N-Channel 600V 14A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXFA14N60P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA14N60P is a MOSFET transistor, a type of field-effect transistor (FET). It is a high-speed, high-voltage device, making it suitable for applications requiring continuous or high voltage pulses, such as low- and medium-frequency power conversion. The IXFA14N60P offers power ratings of 1.6 kV and 14 A and is ideal for a wide range of switch mode power supply, battery charger, remote control, and telecom applications.
The physical construction of FETs is similar to that of bipolar junction transistors (BJTs). However, FETs lack the base terminal found in BJTs and instead use an electric field to control the current through the transistor. As a result, FETs offer faster switching speeds, higher input impedance, and lower output capacitance compared to BJTs. Additionally, FETs are generally easier to use and can be found in smaller and cheaper packages than BJTs.
At the heart of MOSFETs like the IXFA14N60P is the metal–oxide–semiconductor (MOS) structure which offers several properties that make it advantageous for high-power switching applications. It has an extremely low input capacitance which helps keep power dissipation in check, as well as very low gate charge which is necessary for fast switching speeds. Additionally, the IXFA14N60P has a low on-resistance which minimizes wasted power and ensures efficient transfer of current.
The IXFA14N60P operates in two basic states. In the first state, it acts as an open switch, meaning that no current passes through the device. In the second state, it functions as a closed switch, allowing current to flow through the device. This behavior is controlled by a voltage drop across the gate-source junction which acts as a switch, turning the power MOSFET on or off. When a positive voltage is applied to the gate, the voltage drop causes the junction to become conductive, allowing current to flow. Conversely, when a negative voltage is applied to the gate, the voltage drop causes the junction to become non-conductive, turning the power MOSFET off.
The IXFA14N60P is suitable for a variety of uses including switch mode power supply (SMPS) circuits, DC-DC converters, audio amplifiers, and motor drive applications. In these types of applications, the IXFA14N60P can be used to switch high voltage, high current, or both. Due to its high breakdown voltage and low on-resistance, the IXFA14N60P is often used as the main switch in such applications, where it can be controlled with a low voltage signal.
The IXFA14N60P is widely used in a variety of industrial, consumer, and medical applications that require an MOSFET transistor with high voltage and low gate charge. Its fast switching speed, low on-resistance, and low input capacitance make it an ideal choice for applications that require high power but must remain within an efficient size and cost range. The IXFA14N60P is a reliable, affordable, and effective solution for a range of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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