Allicdata Part #: | IXFA4N60P3-ND |
Manufacturer Part#: |
IXFA4N60P3 |
Price: | $ 1.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 4A TO-263AA |
More Detail: | N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-... |
DataSheet: | IXFA4N60P3 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.08675 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 114W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6.9nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFA4N60P3 is a N-channel enhancement-mode power field-effect transistor (FET), designed for high speed switching applications. It achieves this through its MOSFET structure and features a low on-resistance which assists in reducing power losses.
In this context, IXFA4N60P3 is classified as a single-mode MOSFET transistor. Its single-mode operation involves the source and drain electrodes consisting of a low resistance media for current conduction. This media is typically made up of silicon oxide, which is a non-conductive material and thus allows for a higher current rating. Additionally, the junction between the source and drain electrodes is lightly doped, which helps to lower the on-resistance and thus allows for higher switching speeds.
Furthermore, IXFA4N60P3 has a high breakdown voltage, which is important for use in switching applications. This is due to the nature of its construction which features a high current rating and a low on-resistance. Additionally, the high breakdown voltage helps to protect the transistor’s structure from the excessive current seen in switching applications.
The IXFA4N60P3’s most common application is in switching circuits for computer systems, appliances, or communication equipment. The combination of its low on-resistance and high current ratings make it ideal for use in high speed switching applications. Some examples of such applications include power converters, directional control valves, stepper motors, relays, and contactors.
In regards to its working principle, the IXFA4N60P3 uses the principle of MOSFETs to facilitate its operation. Specifically, the transistor uses a metal-oxide-semiconductor (MOS) structure which helps to create this effect. The MOSFET structure allows for the channel between the source and drain electrodes to be formed, driving the current through the channel and providing the low on-resistance that enables the IXFA4N60P3 to operate at high switching speeds.
IXFA4N60P3 is also useful for applications that require a low switching voltage since it requires minimal voltage to initiate the conduction of current. This low switching voltage allows for low-power operation as well as for the creation of smaller circuit boards, thanks to its low power requirements.
Overall, IXFA4N60P3 is an effective transistor for applications that require high speed switching, and its combination of low on-resistance and high current ratings make it suitable for many types of packing and automation applications.
The specific data is subject to PDF, and the above content is for reference
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