Allicdata Part #: | IXFA8N50P3-ND |
Manufacturer Part#: |
IXFA8N50P3 |
Price: | $ 1.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 8A TO-263AA |
More Detail: | N-Channel 500V 8A (Tc) 180W (Tc) Surface Mount TO-... |
DataSheet: | IXFA8N50P3 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.68449 |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 705pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA8N50P3 is a type of single field effect transistor (FET). It is a small signal / low-noise N-channel enhancement-mode MOSFET, specifically designed to provide improved performance in leading-edge and next-generation designs.
Sub-micron trench MOSFET technology provides higher current capability and lower gate charge with improved switching characteristics. These features also make IXFA8N50P3 ideal for applications such as power management, polarity protection, and analog switching.
The IXFA8N50P3 is constructed of an N-channel MOSFET that has two source, one drain, and one gate, all of which are electrically isolated from each other. When voltage is applied to the gate of the MOSFET, current begins to flow from the source to the drain. This allows the transistor to act as a switch that can be used to control the current flow through a load.
Another use for IXFA8N50P3 is as an amplifier. In this application, the FET acts as a current amplifier, amplifying the input voltage to output a much higher voltage level. This makes them ideal for use in high-gain, low-noise audio or video applications.
The IXFA8N50P3 also operates efficiently and reliably at higher temperatures, making it suitable for a broad variety of industrial and automotive applications. Its turn on-off times can be adjusted to suit specific requirements with its stable threshold voltage, current transfer ratio and low gate leakage.
The IXFA8N50P3’s maximum voltage rating is 8 V and its continuous drain current rating at 25 °C is 4.5 A. It is available in TO-263 (SMD-3) and D-PAK packages. The IXFA8N50P3 has a low RDS(ON) at 4 mΩ, which makes it a great choice for power-on applications.
In summary, the IXFA8N50P3 is a single field effect transistor (FET) that is specifically designed to provide improved performance in leading-edge and next-generation designs. It can be used in applications such as power management, polarity protection, and analog switching. Additionally, it has a low RDS(ON), making it ideal for power-on applications. It is reliable, efficient and adjustable and is an excellent choice for industrial, automotive and other applications.
The specific data is subject to PDF, and the above content is for reference
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