IXFA14N85XHV

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The IXFA14N85XHV is a member of the field-effect transistor (FET) family and is classified as a MOSFET (metal-oxide semiconductor field-effect transistor). A MOSFET is a type of field-effect transistor that uses a gate terminal as the control element in order to regulate the conductivity of the source and drain terminals. In the case of the IXFA14N85XHV, transistors are semiconductors, meaning that the amount of current that can flow through the device is controlled by the voltage applied to the gate terminal. This makes it an attractive component for a variety of analog and digital circuit applications such as amplifiers, switching circuits and logic circuits.

The IXFA14N85XHV is a single type of FET, meaning that it has one gate terminal and three terminals overall (source, drain and gate). FETs have the advantage of having a relatively low input voltage compared to other types of transistor. This makes them suitable for use in low voltage applications. In addition, they are capable of withstanding high current and high temperature, making them suitable for high-current and high-temperature applications such as motor controls and temperature sensors.

The operating principle of an FET is based on the fact that current can be controlled using a gate terminal. In the case of the IXFA14N85XHV, the voltage applied to the gate terminal is the input voltage and the current that flows through the source and drain terminals is the output current. The current is regulated by the gate-source voltage being applied to the gate terminal. The higher the gate-source voltage, the higher the current that can flow through the transistor. Conversely, the lower the gate-source voltage, the lower the current that can flow through the transistor.

The IXFA14N85XHV has a peak drain current rating of 24A, which means that it can handle a high current load. In addition, the device has a maximum drain-to-source breakdown voltage of 100V, meaning that it can handle high voltage applications. The on-resistance of the device is 80 mΩ, which is relatively low for a FET, meaning that it is suitable for low-power applications. Additionally, the device has a maximum gate-source threshold voltage of 7V, and maximum gate-source capacitance of 12pF, meaning that it is suitable for high-frequency applications. Finally, the device has a maximum junction temperature of 175°C, meaning that it is suitable for high-temperature applications.

In conclusion, the IXFA14N85XHV is a single type of metal-oxide semiconductor field-effect transistor (MOSFET) that is capable of withstanding high currents and temperatures, meaning that it is suitable for applications such as motor controls, temperature sensors, low-voltage amplifiers, switching circuits and logic circuits.

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