Allicdata Part #: | IXFA20N50P3-ND |
Manufacturer Part#: |
IXFA20N50P3 |
Price: | $ 2.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 20A TO-263AA |
More Detail: | N-Channel 500V 20A (Tc) 380W (Tc) Surface Mount TO... |
DataSheet: | IXFA20N50P3 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.95615 |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 380W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA20N50P3 is a high voltage MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with exceptionally low on-state resistance and high density cell design. It is specifically designed for high-efficiency power conversion applications such as DC-AC inverters, servers, switches, and other products requiring high-frequency operation. The IXFA20N50P3\'s high power and efficiency makes it ideal for applications where power consumption and cost are of primary concern.
The IXFA20N50P3 is a single-pole, 3-terminal MOSFET. It has a drain-source voltage range of 20 volts, a drain current of 8.5 A, and a maximum drain-source on-state resistance of 0.083 Ohms. Furthermore, it features an integrated EMI filter that is capable of reducing conducted EMI radiation. The IXFA20N50P3 also has a temperature range of -55°C to 150°C, making it suitable for operating in harsh environments.
The working principle of the IXFA20N50P3 is based on the MOSFET concept. It works by controlling the flow of current through its gate terminal using an applied voltage level. When the gate voltage is low, the force of attraction between the source and drain terminals is reduced, preventing current flow. When the gate voltage is increased, the force of attraction increases, allowing current to flow. By controlling the gate voltage, current can be precisely controlled.
The IXFA20N50P3 is primarily used in high-voltage, high-frequency power supplies and converters. Its low on-state resistance coupled with its high-frequency characteristics make it suitable for high-efficiency switching applications. The IXFA20N50P3 is also used in power supplies that require active current wave shaping, such as offline AC-DC converters and DC-AC inverters. The IXFA20N50P3 is also used as a level shifter, power regulator, and temperature control device in automotive and industrial systems.
The IXFA20N50P3 is an ideal choice for power engineers looking for a high-quality, high-efficiency MOSFET solution. Its low on-state resistance, high-frequency operation, and integrated EMI filter make it suitable for a wide range of applications, from power supplies and converters to automotive and industrial systems. The IXFA20N50P3 is sure to be a hit with engineers looking for a reliable, high-performance MOSFET solution.
The specific data is subject to PDF, and the above content is for reference
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