IXFA76N15T2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	350W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	97nC @ 10V
Series:	HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs:	20 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	76A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p> IXFA76N15T2 is a single N-Channel Field-Effect Transistor (FET) with an low-on-resistance, low threhsold voltage, and a ruggedized structure that optimizes its performance in a wide variety of applications. This FET can be used for power management, motor control, and other applications. In this article, we will discuss the application field and working principle of the IXFA76N15T2. </p><h3> Application Field of IXFA76N15T2 </h3><p>The IXFA76N15T2 is designed for high-current, low-voltage power management applications in which the device\'s low-on-resistance, low threhsold voltage, and typicall total power consumption is an important factor. It can be used for motor control, power management, and other applications. Furthermore, the ruggedized structure of the device provides high immunity from parasitic oscillation and reduces the effects of electrostatic discharge. </p><h3> Working Principle of IXFA76N15T2 </h3><p>The IXFA76N15T2 uses an N-channel MOSFET constructed of a silicon layer,gate oxide layer, a poly-silicon gate, and a drain and a source,built into a FET package. The device is operated by controlling the voltage on the gate terminal, which determines the current flowing through the channel. When a voltage is applied to the gate,a channel is generated between the source and drain regions. This channel allows electrons to flow from the source region to the drain region and thus current flows from drain to source. By controlling the gate voltage, the current flowing between source and drain can be precisely regulated. </p><p>The IXFA76N15T2 is designed to be used in a variety of applications and provides excellent performance in all of them. Its ruggedized structure provides high immunity from parasitic oscillation and reduces the effects of electrostatic discharge. Its low-on-resistance, low threhsold voltage, and typicall total power consumption makes it ideal for power management and motor control applications. </p>

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