| Allicdata Part #: | IXFA24N60X-ND |
| Manufacturer Part#: |
IXFA24N60X |
| Price: | $ 3.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 24A TO-263 |
| More Detail: | N-Channel 600V 24A (Tc) 400W (Tc) Surface Mount TO... |
| DataSheet: | IXFA24N60X Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.80388 |
| Vgs(th) (Max) @ Id: | 4.5V @ 2.5mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 400W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1910pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 175 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXFA24N60X Application Field and Working Principle
The IXFA24N60X is a high-density MOS field effect transistor with an industry grade floating gate. It is a power device with high-current handling capabilities, which makes it suitable for a wide range of applications, including automotive and consumer electronics. The IXFA24N60X is also a low-cost, low-power alternative to traditional bipolar solutions.
Applications of IXFA24N60X
The IXFA24N60X is an ideal device for applications where low on-resistance and high-current handling are required. This makes it an excellent choice for automotive applications, such as powertrain management, traction control, and automotive infotainment. It is also used in consumer electronics applications, such as audio amplifiers, switching regulators, battery chargers, and consumer appliance control.
Working Principle of IXFA24N60X
The IXFA24N60X is a floating gate MOSFET with an integrated electron floodgate. It has a P-channel construction and is operated in enhancement mode. The device works by having a voltage applied to the control gate, which then turns the device on when the applied voltage exceeds the threshold voltage. When the control gate voltage is below the threshold voltage, the device is turned off. This type of transistor has a low on-resistance, which is beneficial in applications that require high-power efficiency.
The IXFA24N60X also features a unique dropout voltage and total gate charge, providing superior protection against short circuit. The device also has a low gate charge, resulting in a low switching loss that reduces power consumption and increases efficiency. In addition, the IXFA24N60X has higher current ratings than other comparable MOSFETs, enabling it to handle higher loads with greater efficiency.
Conclusion
The IXFA24N60X is a high-quality, high-density MOSFET with an industry grade floating gate. It has a low on-state voltage and a high current-handling capability, making it a great choice for automotive and consumer electronics applications. The integrated electron floodgate and low gate charge provide superior protection and low losses, while the higher current ratings enable the device to handle higher loads more efficiently.
The specific data is subject to PDF, and the above content is for reference
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IXFA24N60X Datasheet/PDF