Allicdata Part #: | IXFK32N80P-ND |
Manufacturer Part#: |
IXFK32N80P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 32A TO-264 |
More Detail: | N-Channel 800V 32A (Tc) 830W (Tc) Through Hole TO-... |
DataSheet: | IXFK32N80P Datasheet/PDF |
Quantity: | 1000 |
Series: | HiPerFET™, PolarHT™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264AA (IXFK) |
Package / Case: | TO-264-3, TO-264AA |
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IXFK32N80P belongs to the Transistors - FETs, MOSFETs - Single categories. It is a power field effect transistor with an insulated drain and source, designed for a wide range of switching and linear applications.
IXFK32N80P has an important advantage which makes it superior to other power semiconductor devices - it can be used to control large currents without the need for external power. This helps in the reduction of power consumption and cost of the system.
The working principle of IXFK32N80P is relatively simple. It features an insulated gate and drain regions, placed on the substrate with a standard thickness of 4micron. The insulated gate region is electrically isolated from the drain region, as the insulation layer is made up of a special high permittivity material.As a result, the gate region is electrically isolated from the drain region, creating a voltage maintained between the two. When a voltage is applied to the gate, it controls the amount of current which can flow across the channel.
IXFK32N80P is mainly used in light-load applications such as variable-speed drives, inverters, switching power supplies and DC-DC converters. It is widely used in military and space applications due to its high power handling capabilities. In addition, it can also be used in industrial applications such as high-speed motor control and frequency control. With its high breakdown voltage, it can also be used in applications where voltage spikes are a concern.
IXFK32N80P is particularly well suited for applications where high switching speeds and high efficiency are required. It is typically used as an isolated gate switch, allowing the user to control the flow of current and dynamically adjust the switching parameters such as gate voltage, gate current and switching frequency. With its high operating temperature and high current capability, IXFK32N80P is the ideal choice for many power applications.
IXFK32N80P can be used as both a power switch and linear amplifier in various applications. In a power switch application, it is typically used as a current limiting device, allowing a user to control the current through a load. In linear amplifier applications, it can be used to amplify a signal, allowing for a wide range of applications. In addition, IXFK32N80P can be used as a modulator and even as the basis of a voltage reference circuit.
Overall, IXFK32N80P is a versatile and powerful power device, ideal for a wide range of applications. It offers a number of advantageous features such as an insulated gate and drain regions, making it suitable for many circuit designs, as well as high power handling capabilities and reliable operating temperature. With its high switching speed and efficient operation, IXFK32N80P is the ideal choice for many power-related applications.
The specific data is subject to PDF, and the above content is for reference
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IXFK210N30X3 | IXYS | 18.17 $ | 500 | 300V/210A ULTRA JUNCTION ... |
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