| Allicdata Part #: | IXFK80N20-ND |
| Manufacturer Part#: |
IXFK80N20 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 80A TO-264AA |
| More Detail: | N-Channel 200V 80A (Tc) 360W (Tc) Through Hole TO-... |
| DataSheet: |  IXFK80N20 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264AA (IXFK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IXFK80N20 is a power MOSFET developed by Infineon Technologies. The device is suitable for use as a power switching device in various application fields such as power supply, motor control, load switch, and DC-DC converter. It is also used in battery charging applications and high-efficiency power conversion. This article will discuss the application fields and the working principle of IXFK80N20.
Application Field
The IXFK80N20 power MOSFET from Infineon is an advanced power switching device with high breakdown voltage. It is primarily used in power supply, motor control, and load switch applications. It is also suitable for use in DC-DC converters, battery chargers, and other high-efficiency power conversion circuits.
The IXFK80N20 is designed for applications that require high current levels and fast switching times. It is particularly suitable for high power applications such as power supplies and motor control. The device has low-on-resistance and low-gate capacitance, which allows it to quickly switch high currents without generating losses. It also has a low gate threshold voltage, which makes it suitable for use in low-voltage systems.
The IXFK80N20 is also suitable for use in battery charging applications. It has a built-in reverse current protection feature, which prevents excessive current from being drawn from the battery. This makes it an ideal choice for battery charging systems which require high current dissipation.
In addition to power supply, motor control and load switch applications, the IXFK80N20 is also suitable for use in high-efficiency power conversion circuits. Its low-on-resistance and low-gate capacitance allow it to quickly switch high currents without generating losses. This makes it an ideal choice for applications that require fast switching times and high efficiency.
Working Principle
The IXFK80N20 power MOSFET is a vertical enhancement-mode power transistor with high breakdown voltage and low on-resistance. It utilizes an N-channel field effect transistor (NFET) as an active element to control the current flow between the source and drain terminals. A gate terminal is used to control the current flow between the source and drain terminals, thereby enabling precise control of the device.
When a positive voltage is applied to the gate, a small electric field is created which repels electrons away from the gate. This reduces the current flow between the source and drain and turns the device off. When the voltage is removed, the electrons will return to the gate, increasing the current flow between the source and drain and turning the device on.
The IXFK80N20 has an extremely low on-resistance which allows it to quickly switch between on and off states. The device also has a low gate threshold voltage, which makes it suitable for use in low-voltage systems. It is also highly reliable and has a long lifetime, making it a suitable choice for applications that require long-term reliability.
In summary, the IXFK80N20 is a power MOSFET from Infineon with high breakdown voltage and low on-resistance. It is used in power supply, motor control and load switch applications. It can also be used in DC-DC converters, battery chargers and other high-efficiency power conversion systems. The IXFK80N20 is an ideal choice for applications that require high current levels, fast switching times and low gate threshold voltages.
The specific data is subject to PDF, and the above content is for reference
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