IXFK27N80Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFK27N80Q is a type of Field Effect Transistor (FET) belonging to the family of single MOSFETs. It is a transistor that uses an electric field to control the movement of electrons from one semiconductor layer to another, making it a popular choice for electrical applications. This type of transistor has many features and benefits, ranging from low power consumption to efficient operation, and is suitable for a wide range of electronics applications.

In essence, FETs make use of a small potential difference within a circuit to switch the small current of a gate-driven voltage to a larger current. This process, known as drain modulation, has the effect of regulating the amount of current allowed to flow through the FET. This can make the transistor suitable for applications where current must be reduced or increased depending on the value of the controlling gate voltage.

The IXFK27N80Q’s gate-source voltage also known as Vgs can range from -20V to +20V, with a maximum gate current rating of 4 mA. The Drain-Source On-resistance can range from 0.3 ohms to 350 mohms, which makes it suitable for high power applications such as power amplifiers, power switching regulators, and motor control. It also has a drain-source voltage of 400V, making it capable of sourcing up to 250W of power.

The IXFK27N80Q is also highly efficient in terms of power consumption, with a quiescent current of only 5mA and an efficiency of up to 98%. This makes the transistor ideal for repetitive operation applications, such as servo-controlled motors, as well as for applications requiring compact power supply designs. In applications such as temperature and pressure control systems, low operating power consumption is essential to ensure precise operation.

In terms of application fields, the IXFK27N80Q can be used in a wide variety of electronic circuits. This includes power amplifiers, power switching regulators, motor control circuits, and even communication-related applications. Additionally, the IXFK27N80Q can be used for analog and digital signal processing, as well as for mixed-signal designs in the automotive, industrial automation, and medical industries.

The IXFK27N80Q is also suitable for high-frequency applications since its switching times are extremely fast. This is mainly due to its low on resistance, which allows the transistor to switch at very high speeds. This, in turn, enables the IXFK27N80Q to be used in applications requiring high-speed signal processing, such as microwave and high-frequency audio amplifiers.

The IXFK27N80Q’s stability and accuracy are also excellent. In terms of its thermal characteristics, the IXFK27N80Q has excellent thermal stability, making it suitable for applications in which dissipation of high amounts of heat may be required. The high stability and accuracy of this type of transistor also make it highly suitable for temperature and pressure control systems, as well as for applications requiring very precise control of voltage and current.

In conclusion, the IXFK27N80Q is a highly versatile and efficient FET which is suitable for a wide range of applications. Not only does it have excellent power and thermal characteristics, but it offers precision and stability as well, making it suitable for both digital and analog engineering projects. With its wide application range and fast switching times, this type of FET can offer an efficient solution to electrical engineering needs.

The specific data is subject to PDF, and the above content is for reference