Allicdata Part #: | IXFK220N17T2-ND |
Manufacturer Part#: |
IXFK220N17T2 |
Price: | $ 7.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 170V 220A TO-264 |
More Detail: | N-Channel 170V 220A (Tc) 1250W (Tc) Through Hole T... |
DataSheet: | IXFK220N17T2 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 6.56460 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264AA (IXFK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 31000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 10V |
Series: | GigaMOS™, HiperFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
Drain to Source Voltage (Vdss): | 170V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFK220N17T2 is a high-performance transistor of the N-Channel, Enhancement Mode type. They feature a low on-resistance, a drain-source breakdown voltage of 220V, a fast switching speed, and a moderate gate threshold voltage. This makes them suitable for many applications, such as power management, power supply, and general DC-DC converter designs.
The IXFK220N17T2 transistors have many uses in the electronics industry. They can be used as a power switch for various forms of DC-DC converters. They are also used as an amplifier for audio or RF applications and as motor controllers for industrial applications. Additionally, these transistors can be used for controlling the power of LED drivers.
The construction and working principle of the IXFK220N17T2 transistors are based on enhancement-mode MOSFETs. They use a substrate of silicon with negative charge carriers. This substrate is in contact with the gate, which consists of a thin layer of engineered material. When the gate is positively charged, electrons are drawn in from the drain region and increase the number of negative charge carriers. This increases the on-resistance of the device, allowing currents to flow in either direction. The gate keep the charges balanced and provides the necessary switching speed.
The IXFK220N17T2 transistors also feature a series of internal protection features. These include ESD protection, output short-circuit protection, and over-temperature protection. The on-resistance of the device also remains stable even if the environment temperature is increased.
The IXFK220N17T2 transistors are a reliable solution for many applications, from power switching and motor control to LED drivers. They have a low on-resistance, a drain-source breakdown voltage of 220V, a fast switching speed, and a moderate gate threshold voltage. They also feature a series of internal protection features, as well as a stable on-resistance even in increased temperatures. With all these features, combined with the enhancement-mode MOSFET structure, the IXFK220N17T2 transistors are an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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