IXFR13N50 Discrete Semiconductor Products |
|
| Allicdata Part #: | IXFR13N50-ND |
| Manufacturer Part#: |
IXFR13N50 |
| Price: | $ 8.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 13A ISOPLUS247 |
| More Detail: | N-Channel 500V 13A (Tc) Through Hole ISOPLUS247™ |
| DataSheet: |  IXFR13N50 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 7.37184 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Through Hole |
| Supplier Device Package: | ISOPLUS247™ |
| Package / Case: | ISOPLUS247™ |
Description
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The IXFR13N50 is an N-channel power MOSFET that is able to handle higher current and voltage levels when compared to other MOSFETs. This makes it an ideal choice for applications which require higher reliability and performance. The device is based on TO-220 packaging, making it both small and lightweight. This makes the device well suited for applications in which board space is limited or even when multiple devices are used in series.In order to understand the IXFR13N50\'s working principle, it is important to first understand the basics of MOSFETs. A MOSFET is an acronym for "Metal Oxide Semiconductor Field Effect Transistor". It is a type of transistor which is made up of several components. These include the gate, the drain, the source, and the substrate. The gate is a layer of metal oxide which is placed on the surface of the semiconductor material. The source and drain are two terminals that allow current to enter or leave the transistor.The MOSFET works by creating an electric field between the gate and the source. This electric field is created by applying a voltage to the gate. As the voltage on the gate increases, the electric field between the gate and the source increases and causes a "switching effect". This switching effect allows current to flow between the source and the drain.The IXFR13N50 is based on the same principle as other MOSFETs, however, its design allows it to have superior performance compared to other MOSFETs. This is due to its use of a high-speed silicon core. The device also has an optimized dielectric structure which enables low capacitance and improved switching performance. This allows the device to provide more accurate data without any noise or distortion.In terms of its application field, the IXFR13N50 can be used for a wide range of applications. It can be used in power circuits for controlling the flow of electricity, as well as in industrial control systems. It is also suitable for use in communications devices such as routers and modems. The device is also suitable for use in automotive applications due to its high voltage and current tolerance.To conclude, the IXFR13N50 is a high performance N-channel MOSFET which is well suited for applications which require high voltage and current tolerance. It is based on a high-speed silicon core and has an optimized dielectric structure which enables improved switching performance and low capacitance. The device is suitable for use in a wide range of applications and is an ideal choice for applications which require higher reliability and performance.
The specific data is subject to PDF, and the above content is for reference
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