IXFR15N100P Allicdata Electronics
Allicdata Part #:

IXFR15N100P-ND

Manufacturer Part#:

IXFR15N100P

Price: $ 6.60
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V ISOPLUS247
More Detail: N-Channel 1000V Through Hole ISOPLUS247™
DataSheet: IXFR15N100P datasheetIXFR15N100P Datasheet/PDF
Quantity: 1000
30 +: $ 5.94090
Stock 1000Can Ship Immediately
$ 6.6
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Description

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The IXFR15N100P is an insulated-gate field effect transistor (IGFET) which belongs to the group of metal-oxide-semiconductor field-effect transistors (MOSFETs). It is a single type of MOSFET, meaning that it has only one functional terminal. This type of transistor is often referred to as an enhancement mode MOSFET and it is characterized by the ability to switch low voltage and current signals.

The IXFR15N100P is a N-Channel enhancement mode MOSFET and it is designed for use in various applications. This type of transistor is designed to handle up to 500 mA of current and 150 V of voltage. The IXFR15N100P has a low on-resistance type output stage, allowing for a smaller switching device with a higher current capacity. It also provides a low impedance path between the source and the drain, which minimizes power losses while operating. The IXFR15N100P is also rated for a very fast switching time, which can be as low as 25 nanoseconds.

The applications of the IXFR15N100P typically involve switching low voltage signals, such as digital logic signals. It is commonly used to switch digital signals between two or more electronic units in a system. It is also used to drive small loads, such as relays and switches. The IXFR15N100P can also be used to pulse high current, allowing it to be used in various motor control circuits. Finally, this type of transistor can be used in power management circuits, where it can be used to control the output voltage or current for various devices.

The working principle of the IXFR15N100P involves the use of an electric field to control the flow of current. This is accomplished by the presence of an insulated gate between the source and the drain of the transistor. When the gate is at ground potential, the transistor is off, meaning that there is no current flow between the source and the drain. When the gate is set to a higher potential than ground, current is allowed to flow between the source and the drain, and the transistor is said to be in "on" state.

The IXFR15N100P is a high-performance MOSFET transistor that provides low on-resistance, high current capacity, low switching times, and the ability to handle digital logic signals. This type of transistor is widely used in various digital logic circuits, motor control circuits, and power management circuits. The IXFR15N100P is an excellent choice for applications in which high switching speeds, low power losses, and reliable operation are required.

The specific data is subject to PDF, and the above content is for reference

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