IXFR44N60 Allicdata Electronics
Allicdata Part #:

IXFR44N60-ND

Manufacturer Part#:

IXFR44N60

Price: $ 13.71
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 38A ISOPLUS247
More Detail: N-Channel 600V 38A (Tc) 400W (Tc) Through Hole ISO...
DataSheet: IXFR44N60 datasheetIXFR44N60 Datasheet/PDF
Quantity: 1000
30 +: $ 12.45200
Stock 1000Can Ship Immediately
$ 13.71
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR44N60 is a single-level power MOSFET with an increased current carrying capability. This transistor is a high-current, high-voltage, high-performance MOSFET device with extremely low on-resistance and output capacitance. This device is suitable for use in various high-voltage, high-current applications.

The IXFR44N60 offers low on-resistance, low parasitic capacitances and fast switching. The device has a maximum collector-emitter voltage of 250V and a maximum collector-source voltage of 350V. It also has a maximum current rating of 10A. The device has a thermal resistance of 4.4 degrees Celsius/W and an avalanche energy rating of 2.5mJ.

The IXFR44N60 can be used in various applications such as power supply, server or notebook computer systems, consumer electronics, automotive and industrial control applications. It is also suitable for use in applications such as switching regulators, motion control, inverters and solar panels. It is capable of operating at temperatures up to 175°C.

The IXFR44N60 is a single-gate MOSFET with a depletion-mode enhancement-mode structure. The depletion mode enables the IXFR44N60 to maintain the on-state of the device even when the gate voltage is negative. The enhancement mode enables the IXFR44N60 to switch the device off when the gate voltage is negative. The device has a typical breakdown voltage of 500V and an operating temperature range of -55°C to +175°C. This MOSFET operates at very high frequencies. It also has a wide dynamic range of low to high gate bias voltage.

The operation of the IXFR44N60 is based on the principle of voltage division between the source and the drain. The source-drain resistance of the FET acts as an amplifier or attenuator, depending on the gate voltage applied, and allows a voltage drop across the MOSFET to be developed. The voltage developed across the MOSFET is proportional to the gate voltage and the drain current. The device has a low flow-through resistance and a high input capacitance.

The IXFR44N60 is a single-level MOSFET with very low on-resistance and output capacitance. It is designed to provide high performance, high current and high voltage operation. The device can be used in a variety of applications due to its operational characteristics and its high on-resistance. This device is suitable for use in power supplies, automotive and industrial control applications, and switching and motion control systems.

The specific data is subject to PDF, and the above content is for reference

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