IXFR48N50Q Allicdata Electronics
Allicdata Part #:

IXFR48N50Q-ND

Manufacturer Part#:

IXFR48N50Q

Price: $ 13.21
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 40A ISOPLUS247
More Detail: N-Channel 500V 40A (Tc) 310W (Tc) Through Hole ISO...
DataSheet: IXFR48N50Q datasheetIXFR48N50Q Datasheet/PDF
Quantity: 1000
30 +: $ 12.00930
Stock 1000Can Ship Immediately
$ 13.21
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 310W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 110 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR48N50Q is a field-effect transistor. In particular, it is a metal oxide semiconductor field-effect transistor, or MOSFET. It is a type of single device, meaning it has only one channel, as opposed to dual ones.

FETs, or field-effect transistors, can be broadly classified into two categories: unipolar and bipolar. Unipolar transistors typically require only one type of charge carrier for operation, such as electrons. Bipolar transistors, on the other hand, require both electrons and holes for their operation. MOSFETs such as the IXFR48N50Q are unipolar devices.

MOSFETs also differ from other transistors in the way they control the current flowing through them. Instead of controlling the current flow directly, as a bi-directional switch would, MOSFETs control the voltage across them. By adjusting the voltage, they are able to control the current flowing through them.

The IXFR48N50Q has been designed to be used in switching and amplifying applications, in part due to its low on-resistance. This low on-resistance allows the FET to have very low power losses when it is turned on, making it ideal for uses such as motor control and inverter applications.

The IXFR48N50Q is a single transistor, meaning it has only one gate. The gate voltage of the transistor is used to control the amount of current flowing through it. When the gate voltage is high, the transistor is “on” and current flows through it. When the gate voltage is low, the transistor is “off” and current stops flowing through it.

The gate of the IXFR48N50Q can also be used to bias the device into an “on” state. This allows for the use of the device for more complex applications, such as pulse width modulation. By applying a voltage to the gate, the IXFR48N50Q can be switched rapidly on and off, allowing it to be used as a pulse width modulator.

In summary, the IXFR48N50Q is a single MOSFET designed for switching and amplifying applications. It is controlled by a gate voltage, and can be used for pulse-width modulation if the gate voltage is adjusted accordingly. With its low on-resistance, the IXFR48N50Q can be used for a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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