IXFR52N30Q

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The IXFR52N30Q is a semiconductor device that serves a special purpose within the realm of power transistors. It is a type of Field Effect Transistor (FET) known as a MOSFET, which is short for Metal Oxide Semiconductor Field Effect Transistor. The IXFR52N30Q’s particular version of a MOSFET is a single device, which is the simplest type of FET you can find. Even though it is both the simplest and often one of the cheapest form of an FET, the IXFR52N30Q still produces a robust and reliable output.

The IXFR52N30Q is a type of FET that uses an insulated-gate principle for its operation. This insulated gate technique allows the IXFR52N30Q to amplify small biasing signals from power transistors to produce a large output current from the source to the drain of the FET. The device is built out of two components; the source and the drain. The nature of the device’s operation requires that the source be at a higher voltage than the drain. The two separate regions allow for a high current flow from the source to the drain due to the insulation provided by the gate.

In terms of applications, the IXFR52N30Qfinds a great deal of use in industrial and manufacturing settings. Its ability to handle large current loads without substantial overheating makes it useful for many purposes. One example is its application in the switching of high voltage power sources. It is also used to control and regulate large amounts of current over both short and long distances. It is also used in power transformers, power supplies, and power modules. The IXFR52N30Q has many other applications in industries such as PHEV and motor control, MOSFET switching and infrared applications.

The IXFR52N30Q is an exceptionally effective device due to its low on-resistance and relatively low switching losses. Its Drain-Source Voltage (VDSS) is typically 50 volts, and it can tolerate pulse currents up to 48A. It also has a maximum continuous drain current (ID) of 36A. And it has an RDS(ON) of 1.4 Ohms, with a maximum threshold voltage of 2.5 volts. With a maximum operating temperature at 125 degrees Celsius and its common source configuration, the IXFR52N30Q is a rugged and reliable device.

Overall, the IXFR52N30Q is a powerful and reliable FET device, capable of handling large loads and pulse currents. As a single, MOSFET FET, it can handle all the usual duties of a power transistor including current regulation, signal amplification, and switching. It is a rugged and cost effective device that can handle considerable pulse currents without a significant amount of power loss. The IXFR52N30Q is a great choice for many industrial and manufacturing applications.

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