IXFR24N90P Discrete Semiconductor Products

Series:	HiPerFET™, PolarP2™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	900V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	460 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	7200pF @ 25V
FET Feature:	--
Power Dissipation (Max):	230W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	ISOPLUS247™
Package / Case:	ISOPLUS247™

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Introduction:
The IXFR24N90P is an enhancement type MOSFET, which is widely used in many different applications due to its powerful features and integrated circuit structure. This innovative field-effect transistor (FET) has been designed as a low-noise, low-saturation voltage device and has excellent performance over broad operating voltage and temperature ranges. The IXFR24N90P is an efficient device that requires less power consumption than equivalent bipolar transistors, making it ideal for use in power management applications as well as for industrial, automotive and consumer applications. In this article, we will discuss the application field and working principle of IXFR24N90P and explain how it works.

Application Field:
IXFR24N90P is used in a wide range of applications. Its efficient nature means that it is used mainly in power management applications, such as in power supplies and other power generator systems. Its low-saturation voltage makes it ideal for automotive and consumer electronics applications. It is also used in low-noise and low-harmonic power conversions, making it a popular choice for industrial environments. The IXFR24N90P is also used in light-controlled switches as well as in NASA\'s Space Shuttle, where its low power consumption has been an invaluable asset.Working Principle:
IXFR24N90P is a type of enhancement-mode field-effect transistor (FET). It uses an insulated-gate electrode to control the current flow. The field-effect transistor is composed of three regions; the source, drain, and gate. The source of current provides the electrons for driving current through the transistor and is connected to the positive voltage. The drain is the point from which the current returns and is connected to the negative side of the supply. The gate, which is insulated from the other electrodes, acts as a control element for the current flow. When a voltage is applied to the gate, it creates a new electric field which modulates the conductivity of the transistor. By changing the gate voltage, the current can be adjusted and its direction of flow can be reversed.IXFR24N90P is specially designed to have low-saturation voltage and low-noise operation. It employs special structures, such as shallow trench isolation (STI) and low-parasitic capacitance, to reduce electronic noise. Its low saturation voltage and low-noise operation make it a perfect choice for power management applications. Its integrated circuit structure also makes it more reliable and considerably reduces power consumption.Conclusion:
IXFR24N90P is a low-noise, low-saturation voltage enhancement-mode field-effect transistor that is used in many power management applications. It has excellent performance over broad operating voltage and temperature ranges, and its integrated circuit structure makes it particularly efficient and reliable. By controlling the gate voltage, it can modulate the conductivity of the transistor and direct the current flow in a specific direction. Its low noise and low saturation voltage performance make it highly suitable for power management applications, automotive and consumer electronics applications, and other industrial environments.

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