IXFR48N60Q3 Allicdata Electronics
Allicdata Part #:

IXFR48N60Q3-ND

Manufacturer Part#:

IXFR48N60Q3

Price: $ 14.63
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 32A ISOPLUS247
More Detail: N-Channel 600V 32A (Tc) 500W (Tc) Through Hole ISO...
DataSheet: IXFR48N60Q3 datasheetIXFR48N60Q3 Datasheet/PDF
Quantity: 1000
30 +: $ 13.30180
Stock 1000Can Ship Immediately
$ 14.63
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 154 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR48N60Q3 is a type of field effect transistor (FET) specifically designed as a single Mosfet type. It is manufactured by IXYS Corporation and designed specifically for more demanding industrial and automotive applications, featuring high performance and reliability. The IXFR48N60Q3 is comprised of a silicon-based transistor coupled with two circuit boards covered by a metal case. It is designed to be robust, reliable, and heat tolerant.

The IXFR48N60Q3 offers excellent performance in digital switching and control applications. The FET is employed in a wide range of industrial control systems, from motor control to industrial robotics. The device is also well suited for MOSFET gate drive applications, such as in power inverters and power converters. It is also used in a variety of automotive applications, from voltage conversion to power distribution.

The working principle of the IXFR48N60Q3 is based on a field effect. A field effect occurs when an electric field is used to regulate the current flowing through a semiconductor device. In the IXFR48N60Q3, a metal oxide semiconductor (MOS) device is used to control the current. The MOSFET has two sources – a source and a drain – through which current is able to flow when the gate terminal is given a certain voltage. The amount of current flowing through the MOSFET can be accurately controlled as the voltage applied to the gate terminal is adjusted.

The MOSFET also has a third terminal - the body – which is connected to the source terminal. This terminal is used to adjust the threshold voltage – the voltage necessary to switch the device between the “on” and “off” state. This provides additional control of the device, allowing for precise control of the current flow through the FET.

The IXFR48N60Q3 operates in a switching mode, ideal for digital switching applications. In this operating mode, the device switches quickly between the “on” and “off” state. This is achieved by rapidly altering the voltage applied to the gate terminal. This rapid switching allows the device to be used in high-frequency switching applications. The IXFR48N60Q3 is also highly reliable, ensuring stability and dependability over time and in harsh applications.

The IXFR48N60Q3 is a single MOSFET device designed to provide excellent performance in industrial and automotive applications. It offers rapid switching, high reliability and robustness, and the ability to accurately control the current flow through the device. The FET is ideal for a variety of digital switching and control applications, from motor control to power inverters. The IXFR48N60Q3 provides superior performance in robust and demanding industrial applications, while also offering excellent performance in automotive applications.

The specific data is subject to PDF, and the above content is for reference

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