IXFR26N120P

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The IXFR26N120P transistor is a part of IXYS’s family of Insulated Gate Bipolar Transistors (IGBT). This device is a medium voltage and high current element designed for motor control and power switching applications.

The IXFR26N120P integrates a single passivated N-channel insulated gate bipolar transistor in a molded Prosistel package. It has a collector current capability up to 26A and a maximum junction temperature of 175°C. The device implements an IGBT and diode co-packaged in a single package with the ability to switch large currents. It features advanced characteristics such as fast and soft switching, ruggedized design for long life performance, and offers low on-state resistance. These advantages make the IXFR26N120P the ideal choice for a variety of motor control and power switching applications including induction heating, uninterruptible power supplies, rectifier bridges, and electronic ballasts.

In order to better understand how the IXFR26N120P works, let’s take a look at how it affects the input and output stages of an application. The IXFR26N120P works by providing a bi-directional conduction path. When a positive voltage is applied to its gate, the IGBT is turned on, allowing current to flow through the collector-emitter junction and to the load. Conversely, when a negative voltage is applied to the gate, the IGBT is turned off and the load is isolated from the power source.

The IXFR26N120P is designed to be used in a wide range of applications. It is used extensively in motor control and power switching applications due to its high current capability and low on-resistance. It is also commonly used in renewable energy systems such as inverters, wind turbines and solar cell applications due to its energy efficient operation and fast switching speeds. Additionally, it is often used in industrial drive systems, DC-DC converters, static relays, and power supplies.

The working principle of the IXFR26N120P is very simple. By applying a gate voltage control signal to the device, the IGBT is turned on or off. Since the device features a low on-state resistance, it allows current to flow quickly and effectively through the collector-emitter path when the device is turned on, therefore allowing it to be used in applications with high current needs. Additionally, the IXFR26N120P features a fast and soft switching technology which allows it to switch quickly and without disruption.

In conclusion, the IXFR26N120P is a medium voltage, high current, and fast switching insulated gate bipolar transistor that is used in a wide range of motor control and power switching applications. It features a low on-state resistance for efficient operation and fast switching speeds, an IGBT and diode co-packaged in a single package, and advanced characteristics such as fast and soft switching. The IXFR26N120P provides an ideal choice for a variety of motor control and power switching applications.

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