MRF7S18170HSR5

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MRF7S18170HSR5 is an advanced performance RF Mosfet device manufactured by Freescale. It belongs to the RF MOSFET family which is designed for high voltage, high power, broadband networking and commercial applications. Many power amplifiers and other transceivers are emerged with this device. This advanced device features an efficient output power linearity, high frequency performance in terms of power, amplification, and minimal input/output mismatch.

Application

MRF7S18170HSR5 is mainly used for RF power amplification and switching applications. This MOSFET is suitable for commercial and military applications, such as HF and VHF broadcast, satellite and microwave communications, CATV, and telecom infrastructure. Moreover, some portable and mobile applications also use it including base station, broadband networking, radar and avionics.

Features

The performance of the device is enabled due to its various features. MRF7S18170HSR5 device has a wide range of operating temperature which ranges from -55°C to 125°C, so it is suitable to use in extreme temperature applications. This device offers low RDS(on) core and CG variation along with high voltage and frequency. Its excellent output power linearity helps reduce distortion and maximize the efficiency. Moreover, it also offers improved small-signal gain, wide-band output match, high RF power.

Working Principle

The working principle of the MRF7S18170HSR5 relies on the Gate Oxide Capacitor. The Gate Oxide Capacitor is the semiconductor which separates the source from the drain. This discourages the carrier flow from source to the drain. The gate oxide capacitor can also be used to control the conductance between the source and drain by varying the voltage at the gate. When an AC voltage is applied to the gate the capacitor has the ability to store the charge and hence controlling the flow of electrons.

The Device has the capacity to control the current flow use the capacitance between the gate and the existing charge on the body. As a consequence, the voltage applied to the gate affects the current flowing between the source and drain. Hence, the device works in a similar method as the Variable Resistor, as the voltage applied to the gate changes the current based on the conditions.

Benefits and Limitations

The MRF7S18170HSR5 has the benefits of higher gain, low power consumption, improved power efficiency and linear output. This device also operates with an improved RF stability and low noise. Since the device has wide operating temperature range and high output stability, it is suitable for different applications.

However, the working of the device still has some limitations. For instance, the power handling capability of the device is low. The wide band output match frequency of the device is only up to 6GHz, which may be less for some applications. The device is also quite expensive comparing to other similar devices.

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