Allicdata Part #: | MRF7S35120HSR5-ND |
Manufacturer Part#: |
MRF7S35120HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 3.5GHZ NI-780S |
More Detail: | RF Mosfet LDMOS 32V 150mA 3.1GHz ~ 3.5GHz 12dB 120... |
DataSheet: | MRF7S35120HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 3.1GHz ~ 3.5GHz |
Gain: | 12dB |
Voltage - Test: | 32V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 120W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
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MRF7S35120HSR5 is an enhancement-mode RF power MOSFET typically used for RF power amplifiers in a variety of wireless applications including mobile phones. It is Class A rated for up to 1000 watts for multiple bands of operation.
The MRF7S35120HSR5 is a N-channel E-mode MOSFET, meaning that it can be used to continuously switch electric current on and off. It has an N-type drain and source and a p-type gate. The integrated circuit is made up of a network of transistors and other components, which makes it ideal for high-frequency operation with high power densities.
When the MOSFET is in the linear state, it behaves like a resistance-controlled switch, allowing current to flow between the drain and source. When the gate voltage is increased, the MOSFET switches to the saturation state, allowing current to flow freely between the drain and source. This is known as the conduction state of the MOSFET, which allows for better current handling.
A key feature of the MRF7S35120HSR5 is its high input impedance, which ensures greater efficiency and stability. This is achieved through its self-capacitance, which is increased when the drain and source electrodes are separated from each other. This increases the channel resistance and lowers the output impedance.
The MRF7S35120HSR5 also offers excellent high-frequency performance due to its low specific on-resistance and high transconductance. It has very low gate voltage sensitivity, which makes it very sensitive to signal-level changes. Its fast switching speed also makes it suitable for high-performance applications such as power amplifiers.
The MRF7S35120HSR5 is used in a variety of power amplifiers. It is commonly used in mobile phones and other communications applications. It is also used in the automotive and consumer electronics industries. The MOSFET is also popular in military applications, where rapid switching and high power levels are required.
In conclusion, the MRF7S35120HSR5 is an enhancement-mode RF power MOSFET typically used for RF power amplifiers in a variety of wireless applications, including mobile phones. It offers excellent high-frequency performance and high input impedance, making it ideal for high-performance systems. It is also used in the automotive and consumer electronics industries and is popular in military applications.
The specific data is subject to PDF, and the above content is for reference
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