MRF7S16150HSR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF7S16150HSR5 is part of a range of RF power transistors from NXP Semiconductors. It is a silicon-based, high-power field-effect transistor (FET) which can be used to amplify signals at high frequencies.

The MRF7S16150HSR5 is an enhancement-mode n-channel RF power FET which has an optimized structure for high-frequency power amplification, providing superior efficiency and improved thermal performance. It is suitable for use in cellular base station amplifiers, point-to-point radio transceivers, WLAN amplifiers, and many other high frequency applications.

The MRF7S16150HSR5 has a maximum drain-source voltage of 30 volts, making it suitable for high-power operation. It features an output power of more than 16W in the 50 to 1000MHz frequency range with an associated gain of at least 11.5dB. What\'s more, it also has an input and output return loss of at least 10dB.

The working principle of the MRF7S16150HSR5 is based on field-effect transistor (FET) technology. An electric field is generated in the transistor by the gate voltage, which modifies the conductivity of the channel in the region of the drain and source. This allows a current to flow through the transistors when the appropriate gate voltage is applied.

The MRF7S16150HSR5 is designed with two 15V DC blocking capacitors, which act as impedance matching components that provide optimal performance and maximize power transfer between the amplifier and antenna. An integrated harmonic filter also helps reduce noise and improve system performance.

The MRF7S16150HSR5 is ideal for applications where size and cost are of the utmost priority. It features a compact, low profile package which reduces total system size and volume. It is also a cost-effective solution for high-power applications.

In conclusion, the MRF7S16150HSR5 is an excellent choice for high frequency, high power, and high efficiency applications. It features many features which make it suitable for a wide range of applications, and its compact size and low cost make it an attractive option.

The specific data is subject to PDF, and the above content is for reference