MRF7S21080HSR3 Allicdata Electronics
Allicdata Part #:

MRF7S21080HSR3-ND

Manufacturer Part#:

MRF7S21080HSR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 2.17GHZ NI-780S
More Detail: RF Mosfet LDMOS 28V 800mA 2.17GHz 18dB 22W NI-780S
DataSheet: MRF7S21080HSR3 datasheetMRF7S21080HSR3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 18dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 800mA
Power - Output: 22W
Voltage - Rated: 65V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Base Part Number: MRF7S21080
Description

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MRF7S21080HSR3 is a high-performance power field effect transistor (FET). It is especially designed to use in the composition of high-efficiency power amplifiers, switches and saturated and non-saturated power sources in the industrial, communications, medical and other related fields. The device is also suitable for use in high-frequency amplifiers operating up to 3.5GHz. This article will discuss the application field and working principle of the MRF7S21080HSR3.

MRF7S21080HSR3 is a high power device, with an output capability of 375 Watts CW and 750 Watts capable maximum power. It features a high-efficiency performance and excellent gain characteristics. This device is a high-performance integrated package FET with excellent thermal characteristics and reliability. The device is highly suitable for applications requiring higher output power compared to standard silicon-based MOSFETs, under a wide variety of load conditions.

In terms of applications, the device is suitable for use in systems such as household appliances, automotive and medical applications, communication systems, and various industrial systems. Applications requiring high power, high efficiency, and reliability benefit from using this device. It is suitable for use in a variety of different applications, from H-bridge type switching circuits to high-efficiency amplifiers. This makes the MRF7S21080HSR3 device a very versatile and reliable device.

The working principle of the MRF7S21080HSR3 device is based on its manufacturing process. It is based on a process of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. The MOSFET technology allows for high current capability and power efficiency in the device. The device is essentially a vacuum tube, which is formed by depositing a metal oxide layer onto a semiconductor substrate that is doped with specifically selected materials. This metal oxide layer is used to create a Permeable Magnetic Field (PMF) which serves as the basis of the transistor action.

The PMF can be manipulated by applying a gate voltage to the gate of the device. This gate voltage, when applied correctly, will cause a change in the PMF which will cause a change in the device\'s current flow. This change in current flow is the basis for its power switching capability, as well as its high efficiency. This is what makes the MRF7S21080HSR3 device so suited for a variety of applications.

In conclusion, the MRF7S21080HSR3 is a high-performance power field effect transistor (FET). It is capable of producing very high powers and high-efficiency with excellent gain characteristics. It is suitable for use in a variety of applications and its power switching capability makes it an invaluable asset. The working principle of the device is based on its MOSFET technology, where the metal oxide layer acts as the basis for the device action.

The specific data is subject to PDF, and the above content is for reference

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