Allicdata Part #: | MRF7S21150HR5-ND |
Manufacturer Part#: |
MRF7S21150HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI-780 |
More Detail: | RF Mosfet LDMOS 28V 1.35A 2.11GHz ~ 2.17GHz 17.5dB... |
DataSheet: | MRF7S21150HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.11GHz ~ 2.17GHz |
Gain: | 17.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.35A |
Power - Output: | 44W |
Voltage - Rated: | 65V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF7S21150 |
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MRF7S21150HR5 is a new type of RF power mosfet designed by Freescale Semiconductor. It is a vertical diffusion power mosfet. It is designed for use in high-power communications systems at frequencies of up to 10 GHz. MRF7S21150HR5 is a power mosfet capable of providing 10 watts of output power in an TO-220 package. It has a high voltage rating of 200V, and is tolerant to a wide range of source and gate voltages from -20V to +20V. It also has an exceptionally fast switching speed, with a rise/fall time of 10nS.
The MRF7S21150HR5 is intended for use in applications such as linear amplification of signals, Switching in RF sources, and high-speed switching in RF systems. It is also used in a variety of other applications such as RF power amplifiers, power converters, and RF receivers. In addition, it is suitable for use in RF circuits used in military and avionics applications, since it has a high-frequency operation.
The working principle of the MRF7S21150HR5 is that it is a power mosfet, and uses the same principle as conventional mosfets. The MRF7S21150HR5 works by controlling the flow of electrons across an insulated barrier between two electrodes. The circuit consists of a gate, source, and drain. When a voltage is applied to the gate, the electrons flow through the channel formed between the source and the drain. This current can be both increased and decreased by changing the voltage applied to the gate. In addition, the power mosfet provides voltage protection, enabling it to switch between high and low voltages.
In addition to its applications, the MRF7S21150HR5 is also designed to operate at high frequencies and is rated to operate up to 10GHz. It also has high efficiency, making it ideal for high power applications. It also has a wide operating range, with a maximum supply voltage rating of 200V. In addition, it has a very low power dissipation rate, making it an ideal choice for applications where high power dissipation is not desired. It has a very high breakdown voltage rating, meaning it can withstand large voltage spikes without damaging the mosfet.
The MRF7S21150HR5 is a power mosfet that is widely used in a variety of applications. It is suitable for use in high-power switching, linear amplification of signals, and high-speed switching in RF systems. It has a high frequency operation, a wide operating range, and a very low power dissipation. It also has a high voltage rating and is tolerant to a wide range of source and gate voltages. These features make it an ideal choice for a variety of applications, including military and avionics applications.
The specific data is subject to PDF, and the above content is for reference
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