| Allicdata Part #: | MRF7S21210HR5-ND |
| Manufacturer Part#: |
MRF7S21210HR5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 65V 2.17GHZ NI-780 |
| More Detail: | RF Mosfet LDMOS 28V 1.4A 2.17GHz 18.5dB 63W NI-780 |
| DataSheet: |  MRF7S21210HR5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 2.17GHz |
| Gain: | 18.5dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.4A |
| Power - Output: | 63W |
| Voltage - Rated: | 65V |
| Package / Case: | NI-780 |
| Supplier Device Package: | NI-780 |
| Base Part Number: | MRF7S21210 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF7S21210HR5 decision to be used in a particular application should be based on the need to use a device that is designed with the full robustness of a high-power 3.2 GHz device. This decision should be adjusted according to the application’s cost constraints and the desired system power output. The MRF7S21210HR5 is a high-performance, discrete, monolithic FET component that is used for RF applications in the 3.2 GHz range. It is available in a TO-247 package and is recommended for use in high-power, linear applications.
Applications
The MRF7S21210HR5 is a high-power RF device used in linear broadcasting and base stations, as well as amplifiers used in telecommunication systems. It is suitable for use in applications requiring medium- to high-power gain, such as outdoor broadband wireless access nodes and indoor distributed antenna systems. The device can be used in both indoor and outdoor applications, as it is designed to operate in the entire 3.2 GHz range.Working Principle
The MRF7S21210HR5 is designed to operate using a differential amplifier configuration. The device is constructed using a pair of complementary transistors, both of which are tied to a common drain. The transistors can be biased in either a common-source or common-drain configuration, depending on whether higher gain or larger output power is desired. The transistors are tied to the drain using an active load, which allows the device to operate with lower distortion and improved linearity.The device is turned on by biasing a gate voltage of around 9 to 12 volts, which will then allow current flow between the source and the drain. The device is then capable of providing the desired gain or power output, depending on the desired application.The MRF7S21210HR5 also contains numerous transistors and other components that can be used for linearization and for noise cancellation, as well as for temperature compensation. This helps to ensure a consistent level of performance over a wide temperature range and can help to reduce distortion and noise.Conclusion
The MRF7S21210HR5 is a high-power RF device designed for linear applications in the 3.2 GHz range. It is available in a TO-247 package and is suitable for use in applications requiring medium- to high-power gain. The device is designed to operate using a differential amplifier configuration and contains numerous components that can be used for linearization and for noise cancellation. This helps to ensure a consistent level of performance over a wide temperature range and can help to reduce distortion and noise.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MRF7" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MRF7S24250NR3 | NXP USA Inc | 82.71 $ | 1000 | TRANS RF LDMOS 250W 32VRF... |
| MRF7S15100HSR3 | NXP USA Inc | 85.45 $ | 1000 | FET RF 65V 1.51GHZ NI780S... |
| MRF7S24250N-3STG | NXP USA Inc | 0.69 $ | 1000 | MRF7S24250N-3STGRF Mosfet |
| MRF7S21170HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.17GHZ NI-880... |
| MRF7S18170HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.81GHZ NI-880... |
| MRF7S21170HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-88O... |
| MRF7S19100NBR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ TO272-... |
| MRF7S19100NR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ TO270-... |
| MRF7S19170HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
| MRF7S19170HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
| MRF7S18170HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-880... |
| MRF7S19170HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
| MRF7S21170HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-880... |
| MRF7S19170HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-880... |
| MRF7S16150HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
| MRF7S16150HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
| MRF7S16150HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
| MRF7S16150HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.66GHZ NI-780... |
| MRF7S18170HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-880... |
| MRF7S18170HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-880... |
| MRF7S19080HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.99GHZ NI-780... |
| MRF7S19080HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
| MRF7S19080HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
| MRF7S19080HSR5 | NXP USA Inc | -- | 1000 | FET RF 65V 1.99GHZ NI-780... |
| MRF7S19120NR1 | NXP USA Inc | 88.65 $ | 998 | FET RF 65V 1.99GHZ TO-270... |
| MRF7S21080HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21080HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21080HSR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21080HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21110HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21110HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21110HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21110HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21150HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21150HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S21150HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI-780... |
| MRF7S27130HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.7GHZ NI-780R... |
| MRF7S27130HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.7GHZ NI-780R... |
| MRF7S27130HSR3 | NXP USA Inc | -- | 1000 | FET RF 65V 2.7GHZ NI-780S... |
| MRF7S27130HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.7GHZ NI-780S... |
Latest Products
MRF6S21050LR3
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
MRF6S18060NR1
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
MRF1550NT1
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
MRF8S21100HSR3
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
LET16060C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
LET16045C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...