MRF7S19100NR1

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The MRT7S19100NR1 is an RF MOSFET transistor that has a wide range of uses in RF circuit design. The device is an N-channel MOSFET with an enhancement-mode operation, meaning that the transistor has a negative gate threshold voltage, resulting in an inverse behavior when compared to a conventional P-channel MOSFET. With a drain-source voltage rating of drain-source breakdown voltages of 20V and an on resistance of 40 ohms at room temperature, the MRF7S19100NR1 is designed to give consistent RF performance over a wide range of frequencies from less than 1MHz to 20GHz. The transistor is rated for up to 3W of total power dissipation, making it suitable for use in a variety of RF power applications.

The MRF7S19100NR1 application field is broad and encompasses many professional and consumer applications. It is often found in RF amplifiers, mixers, oscillators, and various RF backup circuits in medium-to-high frequency bands from mid-VHF up to and including the W-band. It is also suitable for use in two-way radio, mobile radio, microwave, satellite communications and other radio systems requiring high-power output. In addition, the MRF7S19100NR1 can be employed in television tuners, oscillators, filters, transmitters, test instrumentation, decimators and other high-frequency circuits.

The working principle behind the MRF7S19100NR1 is based on a simple two-state operation. When the gate voltage is below the threshold voltage, the transistor is “off” and the current between drain and source is zero. As the voltage across the gate increases above the threshold voltage, the transistor is said to be “on” and the current begins to flow through the drain and source. The device is an enhancement mode MOSFET, meaning that the voltage required for the device to turn on increases as the output current decreases. This makes it ideal for RF circuit applications where high current levels need to be maintained.

The MRF7S19100NR1 is a versatile device capable of providing clean, high-frequency performance for a variety of applications. It has a wide operating range and is both easy to use and cost-effective. With its wide application field and easy to understand working principle, the MRF7S19100NR1 is a great choice for RF circuit designers and RF engineers who want to maintain high performance levels while controlling costs.

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