MRF7S38040HSR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF7S38040HSR3 is a high power field effect transistor (FET) which is primarily used in applications between 380 and 400MHz. This particular FET offers superior performance in terms of thermal design, low noise, high gain, and low current draw. The maximum power rating of the device is 3 KW, and the maximum saturation voltage is 4V. This FET is ideal for various high power RF applications including high speed broadband data transmission, power amplifiers, and microwave applications.

The operation of the MRF7S38040HSR3 is a function of the gate-source voltage (Vgs), drain-source voltage (Vds), and the structure of the device itself. When the device is in its dynamic mode, the gate-source voltage acts to control the current flow through the device. The amount of current passing through the FET depends on the gate-source voltage. In addition, the device can be used in its static mode, where the gate-source voltage acts to control the voltage across the device ra

The specific data is subject to PDF, and the above content is for reference