NTMFD4C50NT3G Allicdata Electronics
Allicdata Part #:

NTMFD4C50NT3G-ND

Manufacturer Part#:

NTMFD4C50NT3G

Price: $ 0.59
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 12A SO8FL
More Detail: MOSFET N-CH 30V 12A SO8FL
DataSheet: NTMFD4C50NT3G datasheetNTMFD4C50NT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.52744
Stock 1000Can Ship Immediately
$ 0.59
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Package / Case: 8-PowerTDFN
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMFD4C50NT3G is a single N-Channel 60V MOSFET in small SOT-23 surface mount plastic package. The MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is mainly composed of a source, a drain, and a characteristic region called a gate, between them. It is used for power switching in various consumer electronics and industrial power applications.

The NTMFD4C50NT3G offers low on-resistance, low gate charge, and fast switching capability making it suitable for voltage converters, DC-DC converters, motor drivers, relays, high speed switching, switching power supplies and other high-speed digital circuits. With built-in protection against electrostatic discharge, it is also quite reliable.

When it is used in an electronic circuit, the transistor basically works through a field effect. Applying a voltage to the gate terminal creates an electric field that modulates the conductivity of the channel. In N channel configuration, it would allow a current flow from the drain to the source. This is called the “on-state” of the transistor. When the gate voltage falls below the threshold level, the electric field becomes insufficient and hence, the current flow stops, which is called the “off-state”. The gate voltage will thus determine the conductivity of the channel and regulate the current flow.

It is important to note that the NTMFD4C50NT3G has an operating temperature range of -55°C to 150°C, with gate-source voltage rating of 10 volts. Its package size of 2 mm x 2.6 mm is just suitable for mobile circuitry and it provides forward current of 5A at 1.8V Vds/. The on-state resistance of this MOSFET is 38 mOhm and the total gate charge is 5.6 nC.

Therefore, the NTMFD4C50NT3G is suitable for usage in many applications, such as high efficiency DC-DC converters, uninterruptible power supplies, relay drives, motor controls, load switches, electronic load switches, and high power buffering and switching. It is also suitable for switching power supplies, voltage conversion, overvoltage/undervoltage protection circuits, and low side switches with high current capacity.

In summary, the NTMFD4C50NT3G is a single N-channel 60V MOSFET. It offers low gate charge, low on-state resistance and fast switching capabilities, making it suitable for various applications, such as low-side switches, voltage conversion, motor control, over voltage/under voltage protection, DC-DC converters and uninterruptible power supplies. With its small size, it is suitable for use in mobile circuitry. Additionally, it operates from -55°C to 150°C .

The specific data is subject to PDF, and the above content is for reference

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