NTMFS10N3D2C Allicdata Electronics
Allicdata Part #:

NTMFS10N3D2C-ND

Manufacturer Part#:

NTMFS10N3D2C

Price: $ 2.68
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 151A POWER56
More Detail: N-Channel 100V 151A (Tc) 138W (Tc) Surface Mount P...
DataSheet: NTMFS10N3D2C datasheetNTMFS10N3D2C Datasheet/PDF
Quantity: 1000
3000 +: $ 2.41114
Stock 1000Can Ship Immediately
$ 2.68
Specifications
Series: PowerTrench®
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id: 4V @ 370µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 50V
FET Feature: --
Power Dissipation (Max): 138W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Power56
Package / Case: 8-PowerTDFN
Description

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NTMFS10N3D2C Application Field and Working Principle

Introduction

NTMFS10N3D2C is an enhancement-mode N-channel MOSFET device designed with a patented Vertical DMOS technology. It combines minimum on-resistance of 10.0 mΩ and low gate charge of 5.0 nC, making it a great choice for high-speed power switching applications. NTMFS MOSFETs have a voltage range of 10V to 30V, a continuous drain current of 8.5A and a Pulsed Current of 24A. It is extremely reliable and robust, allowing it to be used across multiple industries, including Automotive, Industrial and Consumer.

Features

The features of an NTMFS10N3D2C are numerous and make it an ideal component for high-speed switching applications. It offers a fast switching speed, low on-resistance, and low gate-charge, making it a great choice for high-power applications. Additionally, NTMFS MOSFETs are designed with a patented Vertical DMOS technology, making them reliable and robust, allowing for greater versatility within mechanical and electrical applications. Furthermore, NTMFS10N3D2C MOSFETs are designed to operate within a wide operating temperature range, making it the component of choice for multiple industries, including Automotive, Industrial, and Consumer applications.

Application

NTMFS10N3D2C MOSFETs are designed to offer various advantages over other components, making them a great choice for high-speed power switching applications. The component is suitable for use in automotive, industrial and consumer applications that require efficient and reliable power switching operations. Some popular application areas include light dimming, digital audio amplifiers, motor drives, DC-DC converters, solar power inverters, and many more.

Working Principle

NTMFS10N3D2C MOSFETs are enhancement-mode devices, which means that in order to turn the device on, an external voltage must be applied. Once this voltage is applied, the current begins to flow through the device, allowing it to switch on. An internal N-type diffusion region around the drain terminal makes it possible for the device to remain off until a certain external voltage is applied to the gate terminal. When this external voltage is greater than the threshold voltage (Vt) of the device, the device will turn on. This property of an N-type MOSFET allows for very efficient and predictable power switching, making it a great choice for high-power applications.

Conclusion

In conclusion, NTMFS10N3D2C is an enhancement-mode N-channel MOSFET designed with patented Vertical DMOS technology. It offers superior performance, reliability, and robust protection for high-power switching applications. Typically, which industries can benefit from an NTMFS10N3D2C MOSFET include Automotive, Industrial and Consumer. The working principle of NTMFS10N3D2C requires an external voltage to be applied to the gate terminal in order to turn the device on, allowing it to switch on with a very efficient and predictable manner, thus making it a great choice for high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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