Allicdata Part #: | NTMFS10N3D2C-ND |
Manufacturer Part#: |
NTMFS10N3D2C |
Price: | $ 2.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 151A POWER56 |
More Detail: | N-Channel 100V 151A (Tc) 138W (Tc) Surface Mount P... |
DataSheet: | NTMFS10N3D2C Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 2.41114 |
Series: | PowerTrench® |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 151A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 67A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 370µA |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6215pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 138W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Power56 |
Package / Case: | 8-PowerTDFN |
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NTMFS10N3D2C Application Field and Working Principle
Introduction
NTMFS10N3D2C is an enhancement-mode N-channel MOSFET device designed with a patented Vertical DMOS technology. It combines minimum on-resistance of 10.0 mΩ and low gate charge of 5.0 nC, making it a great choice for high-speed power switching applications. NTMFS MOSFETs have a voltage range of 10V to 30V, a continuous drain current of 8.5A and a Pulsed Current of 24A. It is extremely reliable and robust, allowing it to be used across multiple industries, including Automotive, Industrial and Consumer.
Features
The features of an NTMFS10N3D2C are numerous and make it an ideal component for high-speed switching applications. It offers a fast switching speed, low on-resistance, and low gate-charge, making it a great choice for high-power applications. Additionally, NTMFS MOSFETs are designed with a patented Vertical DMOS technology, making them reliable and robust, allowing for greater versatility within mechanical and electrical applications. Furthermore, NTMFS10N3D2C MOSFETs are designed to operate within a wide operating temperature range, making it the component of choice for multiple industries, including Automotive, Industrial, and Consumer applications.
Application
NTMFS10N3D2C MOSFETs are designed to offer various advantages over other components, making them a great choice for high-speed power switching applications. The component is suitable for use in automotive, industrial and consumer applications that require efficient and reliable power switching operations. Some popular application areas include light dimming, digital audio amplifiers, motor drives, DC-DC converters, solar power inverters, and many more.
Working Principle
NTMFS10N3D2C MOSFETs are enhancement-mode devices, which means that in order to turn the device on, an external voltage must be applied. Once this voltage is applied, the current begins to flow through the device, allowing it to switch on. An internal N-type diffusion region around the drain terminal makes it possible for the device to remain off until a certain external voltage is applied to the gate terminal. When this external voltage is greater than the threshold voltage (Vt) of the device, the device will turn on. This property of an N-type MOSFET allows for very efficient and predictable power switching, making it a great choice for high-power applications.
Conclusion
In conclusion, NTMFS10N3D2C is an enhancement-mode N-channel MOSFET designed with patented Vertical DMOS technology. It offers superior performance, reliability, and robust protection for high-power switching applications. Typically, which industries can benefit from an NTMFS10N3D2C MOSFET include Automotive, Industrial and Consumer. The working principle of NTMFS10N3D2C requires an external voltage to be applied to the gate terminal in order to turn the device on, allowing it to switch on with a very efficient and predictable manner, thus making it a great choice for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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