NTMFS4701NT1G

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The NTMFS4701NT1G, an enhancement-mode high-voltage FET (Field Effect Transistor), is primarily designed for use in high-voltage switching applications. This device features very low RDS(on) coupled with very low gate charge to achieve fast switching performance. Additionally, the large dielectric strength, high avalanche capability and high EAS withstand capabilities make the NTMFS4701NT1G suitable for many different high-voltage power switching applications, such as AC and DC drives, UPS, HVAC, computer peripheral equipment, and lighting systems. Before delving deeper into the NTMFS4701NT1G FET, let\'s first discuss the basics of MOSFETs (metal-oxide-semiconductor field-effect transistors). MOSFETs are commonly employed in many high-current, high-voltage circuits due to their low input capacitance, fast switching time, and low on-state resistance. The NTMFS4701NT1G is a single VDS MOSFET (VDS stands for drain-to-source voltage) and has a drain current up to 54 A. This MOSFET is fabricated using NFET (N-channel FET) Technology and is suitable for high-current switching applications. The device is further characterized by its low gate-source capacitance, low gate-drain capacitance, and an ultra-low on-resistance. The NTMFS4701NT1G operators features include a Gate-Source Voltage (VGS) range from 20V-30V, a Drain-Source Voltage (VDS) range of 20V-600V, and a Drain to Source On-State Resistance (RDS(on)) of 6.3m ohm. The device is also rated for an Avalanche Current (IAR) of 7A and an Avalanche Energy (EAR) of 220mJ. When discussing the working principles of the NTMFS4701NT1G, it is important to understand that this device is an enhancement-mode FET, meaning it operates in a non-conductive state without any gate-source voltage. When a positive gate-source voltage is applied to the device, the enhancement-mode FET\'s gain increases and the FET begins to conduct. The higher the gate-source voltage, the higher the gain and current conduction. Essentially, the NTMFS4701NT1G can be used in any application that requires a high-voltage switching device. This device is well-suited for applications such as motor drive systems, AC power supplies, inverters, and DC to DC converters, among others. In closing, the NTMFS4701NT1G is a versatile high-voltage FET that is commonly used in a variety of high-current and high-voltage applications. As an enhancement-mode FET, its gain increases with the application of a positive gate-source voltage and its drain current rises as a result.

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