NTMFS4707NT1G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	735pF @ 24V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	6.9A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction
The NTMFS4707NT1G is a Single Surface-Mounted MOSFET with a power limit of 40 V and a maximum drain current of 4.7 A. This device is ideal for automotive and industrial applications that require a reliable power switch with built-in protection.

Application fields
The NTMFS4707NT1G is suitable for applications where an on/off switch with less power loss, low gate charge, low gate-to-drain capacitance and low design complexity are desired. Common application fields include vehicle drives and generators, lighting, telecommunications equipment, industrial control systems, power converters and inverters, etc.

Working principle
The NTMFS4707NT1G is a unipolar MOSFET that utilizes a source-drain structure. This device uses a gate oxide layer to create a conductive channel between the source and the drain. The device is activated by an applied voltage, creating a conductive channel between the source and drain and allowing current to flow. The device is then turned off by removing the voltage, creating an insulation barrier between the source and the drain, thus preventing current flow.

Features and benefits
The NTMFS4707NT1G offers a number of key features and benefits that make it a great choice for many applications. The device offers low power loss (Rdson (TH)" is only 0.03 ohm 50°C), a low gate charge (Qg" is only 6.5 nC), low gate-to-drain capacitance (Cgd" is only 8.3 pF at 4.5 V) and total gate charge (Qgd" is only 9.1 nC). The device also has an Avalanche Energy Rating of 175 mJ, a Drain-to-Source Breakdown Voltage (Vdss" ) of 40 V, and a Low-Voltage Gate Turn-off Threshold (Vgs(th)" ) of 0.65 V at 25°C. Further, this device can be packaged in a space-saving SOT-223 package, which allows for a compact design. The features and benefits of the NTMFS4707NT1G make it a great choice for many automotive and industrial applications.

Conclusion
The NTMFS4707NT1G is a high-performance, low-power single surface-mounted MOSFET that offers a number of features and benefits, making it an ideal choice for many automotive and industrial applications. The device utilizes a source-drain structure and is activated by an applied voltage, creating a conductive channel between the source and the drain. The device also offers low power loss, low gate charge, low gate-to-drain capacitance and low design complexity. The NTMFS4707NT1G can be packaged in a space-saving SOT-223 package and offers a number of advantages including Avalanche Energy Rating, Drain-to-Source Breakdown Voltage, Low-Voltage Gate Turn-off Threshold, etc. Overall, the NTMFS4707NT1G is a highly reliable, cost-effective solution for many automotive and industrial applications.

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