NTMFS4835NT3G

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The NTMFS4835NT3G is a field-effect transistor (FET) designed for use in applications that require high electrical stability, low series resistance, and high levels of integration.

This FET is a 650 mΩ, 30 V rated single-gate MOSFET (metal-oxide-semiconductor field-effect transistor) with a N-channel enhancement mode. This FET is suitable for use in a variety of applications such as switching, amplifiers, and regulators. It is an N-channel MOSFET with a high current handling capability and low On-state resistance.

The NTMFS4835NT3G is able to provide low gate charge, which reduces switching power supply design costs. This FET has a gate-source breakdown voltage rating of 30 V, and a gate-source drain breakdown voltage rating of 20 V. This FET has a wide range of continuous drain current of -4 A at 25°C and -1 A at 125°C. It has a typical gate threshold voltage of 1.8 V and a maximum drain-source on-resistance of 650 mΩ. This FET can handle a maximum drain-source voltage up to 30 V and its maximum channel temperature is 175°C.

The working principle of this FET is that when a positive voltage is applied to the gate terminal, a thin insulating layer of metal oxide forms across the surface of the channel between the source and drain terminals. This enables the electric current to flow easily between the source and drain terminals, allowing the FET to act as an effective on/off switch. This also allows for a larger current to flow in the channel than in the reverse direction, creating a voltage drop across the FET.

The NTMFS4835NT3G FET can be used in a variety of applications, including instrumentation amplifiers, power supplies, motor control circuits, lighting control, and home automation systems. It is also ideal for use in many high-powered switching applications, such as switching regulators and DC-DC converters. This FET is an ideal choice for an economical and efficient solution.

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