NTMFS4965NFT3G

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The NTMFS4965NFT3G is a high-performance, high-density, low-power and low-voltage N-Channel enhancement-mode Field-Effect Transistor (MOSFET) from ON Semiconductor. It employs a vertical double-diffused MOSFET (DMOS) technology for offer a wide range of cost effective solutions for various applications in the consumer and industrial markets. The NTMFS4965NFT3G is available in standard 3 mm2 Surface Mount Device (SMD) package, making them ideal for both manual and automated assembly. This versatile, feature-rich device is suitable for both switching and linear applications and offers superior current, voltage, speed and power dissipation characteristics, making it one of the most popular MOSFETs on the market today.

The NTMFS4965NFT3G is designed to meet the ever-tighter size and power requirements of modern systems. It offers superior current and voltage driving capabilities, high level of on-resistance, low gate charge and body diode reverse recovery time. This device is optimized for high-frequency switching operations with superior dV/dT and dI/dT capabilities. The advanced structure of the NTMFS4965NFT3G helps to minimize non-linearities (resistance to gate charge ratio) and results in significant power-saving and reduced power losses.

The main application field for the NTMFS4965NFT3G includes low-Ohmic switching power supplies, general power management, lighting ballasts, DC-DC converters, synchronous buck regulators, circuits requiring high-side switch drive, and applications that require high power performance and reliability. Its advanced features and performance make it an ideal alternative to commonly used discrete MOSFETs, allowing for significant savings in both power and cost.

The working principle of the NTMFS4965NFT3G is quite simple. It consists of a source, a drain and a gate, which are connected to an electrical conductive material. When a voltage is applied to the gate, it creates an electric field within the channel of the device, which causes electrons to be attracted towards the gate and repelled from the drain. This causes the channel to narrow, reducing the resistance and allowing current to flow from the source to the drain. By adjusting the voltage applied to the gate, the resistance of the channel can be accurately controlled, allowing for precise control of current flow.

The NTMFS4965NFT3G offers many advantages over conventional MOSFETs, not least its reduced power dissipation and higher switching speeds. Its exceptional performance and reliability make it one of the most popular MOSFETs on the market today. As well as powering the latest high-tech systems, its versatility means it can also be used in simple switching applications, allowing for a simple, cost-effective solution to many different power management problems.

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