NTMFS5C430NLT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS5C430NLT1GOSTR-ND |
Manufacturer Part#: |
NTMFS5C430NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 200A SO8FL |
More Detail: | N-Channel 40V 3.8W (Ta), 110W (Tc) Surface Mount ... |
DataSheet: | NTMFS5C430NLT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS5C430NLT1G (hereinafter referred to as “FET”) is a small signal transistor that can be used in a variety of applications. It primarily falls into the category of Field Effect Transistors (FETs), as well as single Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). These transistors are capable of performing a number of different operations, and are commonly found in consumer electronics, telecommunications, and many other consumer and industrial applications. Specifically, the NTMFS5C430NLT1G is a logic level FET and is ideal for applications that require reliable and low on-resistance performance.
The FET operates using the principle of field effect. This is a type of transistor operation in which an electric field is used to modify the conductivity of a channel between two terminals, or gate and drain. When applying an electric field between the gate and the drain, the channel between them is widened and the resistance of the FET decreases, allowing current to flow. Conversely, when the charge between the gate and the drain is reduced, the channel between them is closed, and the FET is effectively switched off, which prevents current from flowing. This is the basic principle behind the FET’s operation, and is the main reason for its popularity in many different applications.
The NTMFS5C430NLT1G has many advantages over other types of transistors. These include its low cost, low on-resistance, high input impedance, high frequency performance, as well as its small package size. All of these features make this FET suitable for many different applications, such as circuit switching, voltage regulation, signal amplification, in addition to power management and signal processing.
The NTMFS5C430NLT1G is found in many different applications, but one of the most common is in automotive electronics. This type of FET is often used in high current systems, such as power steering and anti-lock braking systems. The FET offers an effective solution for these automotive applications as it is able to effectively control the signal level to match the various electronic components used.
The FET can also be found in consumer electronics, such as smartphones and laptop computers. In these applications, the FET is used for signal processing, voltage regulation, and power management. The FET can provide a low on-resistance signal that is reliable and stable, helping to prolong the battery life of our devices.
The NTMFS5C430NLT1G is also commonly used in telecommunications applications. This type of FET is typically found in optoelectronic devices, such as laser diodes. The FET helps to control the output power level of these devices, providing a more reliable signal for communications applications.
The FET can also be found in industrial applications, such as robotics and automation. These applications require precision control of the signals provided by the FET, and the NTMFS5C430NLT1G is able to provide this with its low-resistance performance.
The NTMFS5C430NLT1G is a versatile and reliable transistor that is suitable for a wide range of applications. The key features of this FET make it ideal for signal processing, voltage regulation, power management, and automotive applications, among others. As a result, it is clear why this type of FET is so popular in many different settings.
The specific data is subject to PDF, and the above content is for reference
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