
Allicdata Part #: | NTMFS5C450NLT3G-ND |
Manufacturer Part#: |
NTMFS5C450NLT3G |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 110A SO8FL |
More Detail: | N-Channel 40V 27A (Ta), 110A (Tc) 3.7W (Ta), 68W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.39483 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 110A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS5C450NLT3G is a Vertical-Channel Power MOSFET. It integrates a high-gain vertical channel structure with an advanced high speed process technology to the gate protective circuit into a single package. This type of MOSFET is designed to improve the power conversion efficiency of consumer electronics and industrial applications. It has a small footprint and is a low cost alternative for traditional power MOSFETs. In addition, it also has excellent on-state characteristics, high reliability, and low power loss.
Application Field
The NTMFS5C450NLT3G is typically used in the following applications:
- Computer power supplies and desktop computer systems
- Telecommunication equipment
- Industrial motor and motor drives
- Automotive switch mode power supplies
- Motor drives for home appliances
Working Principle
The working principle of the NTMFS5C450NLT3G is based on the vertical-channel structure which helps to minimize the voltage drop across the MOSFET. It works by using a vertical channel structure which pushes the electric current through it like a pile of vertical plates, while the gate is connected to the vertical channel\'s end with a metal gate. This structure helps reduce the on-resistance, resulting in lower power loss while still achieving very high voltage blocking capabilities and low leakage. Furthermore, the vertical channel structure also enables precise control of the gate voltage required to turn off the MOSFET. The power MOSFET can also be controlled with a gate voltage between 5 to 20V.
Conclusion
It is clear from the above discussion that the NTMFS5C450NLT3G is an ideal solution for a wide range of application fields, ranging from computer power supplies, telecommunication equipment, to motor drives for home appliances. Its small size and low cost make it the perfect choice for a wide array of applications. Furthermore, it features an advanced vertical channel structure which greatly reduces the on-resistance and improves the power conversion efficiency. Therefore, the NTMFS5C450NLT3G is one of the best power MOSFETs available in the market today.
The specific data is subject to PDF, and the above content is for reference
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